DC Field | Value | Language |
---|---|---|
dc.contributor.author | Sun, Linfeng | ko |
dc.contributor.author | Hwang, Genuwoo | ko |
dc.contributor.author | Choi, Wooseon | ko |
dc.contributor.author | Han, Gyeongtak | ko |
dc.contributor.author | Zhang, Yishu | ko |
dc.contributor.author | Jiang, Jinbao | ko |
dc.contributor.author | Zheng, Shoujun | ko |
dc.contributor.author | Watanabe, Kenji | ko |
dc.contributor.author | Taniguchi, Takashi | ko |
dc.contributor.author | Zhao, Mali | ko |
dc.contributor.author | Zhao, Rong | ko |
dc.contributor.author | Kim, Young-Min | ko |
dc.contributor.author | Yang, Heejun | ko |
dc.date.accessioned | 2021-01-28T06:10:19Z | - |
dc.date.available | 2021-01-28T06:10:19Z | - |
dc.date.created | 2021-01-26 | - |
dc.date.created | 2021-01-26 | - |
dc.date.created | 2021-01-26 | - |
dc.date.issued | 2020-03 | - |
dc.identifier.citation | NANO ENERGY, v.69, pp.104472 | - |
dc.identifier.issn | 2211-2855 | - |
dc.identifier.uri | http://hdl.handle.net/10203/280181 | - |
dc.description.abstract | To realize ultrafast and energy-efficient electronic devices, reducing the switching voltage slope for ON and OFF states that scales the supply voltage and device dimensions is critical. Novel device architectures based on two-dimensional (2D) materials have overcome the fundamental thermionic limit of the switching slope (60 mV/dec); however, a versatile switching device required for highly integrated memory and neuromorphic applications has not been achieved with such exceptional switching slope characteristics. Here, we demonstrate a switching voltage slope down to 0.62 mV/dec in a threshold switching device based on a vertical heterojunction of silver/hexagonal boron nitride (h-BN)/graphene. The sub-1 mV/dec switching slope for the first time, maintaining a high ON/OFF ratio (up to 10(10)), originates from the unique coupling between the migrated silver atoms and the chemically-inert graphene electrode through the 2D insulating h-BN. Moreover, our original switching device enables the evolution from a conventional volatile (threshold switching) to non-volatile memristive state by adequate voltage spikes, which is ideal for selector applications in highly integrated crossbar array architecture and in a novel synaptic device for neuromorphic computing. | - |
dc.language | English | - |
dc.publisher | ELSEVIER | - |
dc.title | Ultralow switching voltage slope based on two-dimensional materials for integrated memory and neuromorphic applications | - |
dc.type | Article | - |
dc.identifier.wosid | 000513814400066 | - |
dc.identifier.scopusid | 2-s2.0-85077767841 | - |
dc.type.rims | ART | - |
dc.citation.volume | 69 | - |
dc.citation.beginningpage | 104472 | - |
dc.citation.publicationname | NANO ENERGY | - |
dc.identifier.doi | 10.1016/j.nanoen.2020.104472 | - |
dc.contributor.localauthor | Yang, Heejun | - |
dc.contributor.nonIdAuthor | Sun, Linfeng | - |
dc.contributor.nonIdAuthor | Hwang, Genuwoo | - |
dc.contributor.nonIdAuthor | Choi, Wooseon | - |
dc.contributor.nonIdAuthor | Han, Gyeongtak | - |
dc.contributor.nonIdAuthor | Zhang, Yishu | - |
dc.contributor.nonIdAuthor | Jiang, Jinbao | - |
dc.contributor.nonIdAuthor | Zheng, Shoujun | - |
dc.contributor.nonIdAuthor | Watanabe, Kenji | - |
dc.contributor.nonIdAuthor | Taniguchi, Takashi | - |
dc.contributor.nonIdAuthor | Zhao, Mali | - |
dc.contributor.nonIdAuthor | Zhao, Rong | - |
dc.contributor.nonIdAuthor | Kim, Young-Min | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Two-dimensional materials | - |
dc.subject.keywordAuthor | Graphene transistor | - |
dc.subject.keywordAuthor | Neuromorphic devices | - |
dc.subject.keywordAuthor | Memory device | - |
dc.subject.keywordAuthor | Selector | - |
dc.subject.keywordPlus | PLASTICITY | - |
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