Feasibility study of high current rating 1.7-kV SiC MOSFET module is carried out targeting for high power 1.5-kV PV central inverter. Based on electrical and thermal characterization data of the module, efficiency-power density Pareto optimization of total system is provided. The analysis considers the coupling between semiconductor, cooling system, LCL filter, and DC link. Particularly, comparative evaluation between 1.2-kV Si IGBT-based 3-level topology and 1.7-kV SiC MOSFET-based 2-level one is focused. In addition, potential benefit of the bipolar PV system is discussed.