DC Field | Value | Language |
---|---|---|
dc.contributor.author | Liu, L. | ko |
dc.contributor.author | Zou, X. | ko |
dc.contributor.author | Goh, W. L. | ko |
dc.contributor.author | Ramamoorthy, R. | ko |
dc.contributor.author | Dawe, G. | ko |
dc.contributor.author | Je, Minkyu | ko |
dc.date.accessioned | 2021-01-06T05:50:12Z | - |
dc.date.available | 2021-01-06T05:50:12Z | - |
dc.date.created | 2020-04-09 | - |
dc.date.created | 2020-04-09 | - |
dc.date.issued | 2012-04 | - |
dc.identifier.citation | Electronics Letters, v.48, no.9, pp.479 - 480 | - |
dc.identifier.issn | 0013-5194 | - |
dc.identifier.uri | http://hdl.handle.net/10203/279644 | - |
dc.description.abstract | Advances in neuroscience research and clinical applications have increasingly called for the low-power low-noise simultaneous recording of neural signals from a large number of electrodes. The neural interface IC is one of the essential blocks to capture the weak neural signals. Presented is an energy-efficient low-noise neural recording amplifier with enhanced noise efficiency factor (NEF) for neural recording systems. Based on the conventional capacitive feedback and pseudo-resistor structure, the fully differential neural amplifier employs the current-reuse technique to achieve low noise and high current efficiency, consuming 800 nA at 1 V power supply. The measured thermal noise floor is 43nV/root Hz and the input-referred noise is 5.71 mu V-rms when integrated from 1 Hz to 50 kHz, leading to an NEF of 2.59. The entire neural amplifier has been fabricated using a 0.18 mu m CMOS technology, occupying an area of 0.05 mm(2) | - |
dc.language | English | - |
dc.publisher | Institution of Engineering and Technology (IET) | - |
dc.title | 800 nW 43 nV/√Hz neural recording amplifier with enhanced noise efficiency factor | - |
dc.type | Article | - |
dc.identifier.wosid | 000303158500009 | - |
dc.identifier.scopusid | 2-s2.0-84860513760 | - |
dc.type.rims | ART | - |
dc.citation.volume | 48 | - |
dc.citation.issue | 9 | - |
dc.citation.beginningpage | 479 | - |
dc.citation.endingpage | 480 | - |
dc.citation.publicationname | Electronics Letters | - |
dc.identifier.doi | 10.1049/el.2012.0685 | - |
dc.contributor.localauthor | Je, Minkyu | - |
dc.contributor.nonIdAuthor | Liu, L. | - |
dc.contributor.nonIdAuthor | Zou, X. | - |
dc.contributor.nonIdAuthor | Goh, W. L. | - |
dc.contributor.nonIdAuthor | Ramamoorthy, R. | - |
dc.contributor.nonIdAuthor | Dawe, G. | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
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