800 nW 43 nV/√Hz neural recording amplifier with enhanced noise efficiency factor

Cited 39 time in webofscience Cited 45 time in scopus
  • Hit : 285
  • Download : 0
DC FieldValueLanguage
dc.contributor.authorLiu, L.ko
dc.contributor.authorZou, X.ko
dc.contributor.authorGoh, W. L.ko
dc.contributor.authorRamamoorthy, R.ko
dc.contributor.authorDawe, G.ko
dc.contributor.authorJe, Minkyuko
dc.date.accessioned2021-01-06T05:50:12Z-
dc.date.available2021-01-06T05:50:12Z-
dc.date.created2020-04-09-
dc.date.created2020-04-09-
dc.date.issued2012-04-
dc.identifier.citationElectronics Letters, v.48, no.9, pp.479 - 480-
dc.identifier.issn0013-5194-
dc.identifier.urihttp://hdl.handle.net/10203/279644-
dc.description.abstractAdvances in neuroscience research and clinical applications have increasingly called for the low-power low-noise simultaneous recording of neural signals from a large number of electrodes. The neural interface IC is one of the essential blocks to capture the weak neural signals. Presented is an energy-efficient low-noise neural recording amplifier with enhanced noise efficiency factor (NEF) for neural recording systems. Based on the conventional capacitive feedback and pseudo-resistor structure, the fully differential neural amplifier employs the current-reuse technique to achieve low noise and high current efficiency, consuming 800 nA at 1 V power supply. The measured thermal noise floor is 43nV/root Hz and the input-referred noise is 5.71 mu V-rms when integrated from 1 Hz to 50 kHz, leading to an NEF of 2.59. The entire neural amplifier has been fabricated using a 0.18 mu m CMOS technology, occupying an area of 0.05 mm(2)-
dc.languageEnglish-
dc.publisherInstitution of Engineering and Technology (IET)-
dc.title800 nW 43 nV/√Hz neural recording amplifier with enhanced noise efficiency factor-
dc.typeArticle-
dc.identifier.wosid000303158500009-
dc.identifier.scopusid2-s2.0-84860513760-
dc.type.rimsART-
dc.citation.volume48-
dc.citation.issue9-
dc.citation.beginningpage479-
dc.citation.endingpage480-
dc.citation.publicationnameElectronics Letters-
dc.identifier.doi10.1049/el.2012.0685-
dc.contributor.localauthorJe, Minkyu-
dc.contributor.nonIdAuthorLiu, L.-
dc.contributor.nonIdAuthorZou, X.-
dc.contributor.nonIdAuthorGoh, W. L.-
dc.contributor.nonIdAuthorRamamoorthy, R.-
dc.contributor.nonIdAuthorDawe, G.-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 39 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0