High-Performance Copolymer Conductive-Bridging RAM (CBRAM) for Neuromorphic Computing Controlling the Copper Dissolution

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dc.contributor.authorOh, Jungyeopko
dc.contributor.authorYang, Sang Yoonko
dc.contributor.authorLee Changhyeonko
dc.contributor.authorIm, Sung Gapko
dc.contributor.authorChoi, Sung-Yoolko
dc.date.accessioned2020-12-19T01:10:18Z-
dc.date.available2020-12-19T01:10:18Z-
dc.date.created2020-12-04-
dc.date.issued2020-07-02-
dc.identifier.citationNANO KOREA 2020-
dc.identifier.urihttp://hdl.handle.net/10203/278739-
dc.languageEnglish-
dc.publisherKorea Nanotechnology Research Society-
dc.titleHigh-Performance Copolymer Conductive-Bridging RAM (CBRAM) for Neuromorphic Computing Controlling the Copper Dissolution-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnameNANO KOREA 2020-
dc.identifier.conferencecountryKO-
dc.identifier.conferencelocationKINTEX-
dc.contributor.localauthorChoi, Sung-Yool-
dc.contributor.nonIdAuthorOh, Jungyeop-
dc.contributor.nonIdAuthorYang, Sang Yoon-
dc.contributor.nonIdAuthorLee Changhyeon-
dc.contributor.nonIdAuthorIm, Sung Gap-
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EE-Conference Papers(학술회의논문)
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