DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yoon, Youngbin | ko |
dc.contributor.author | Kim, Sunjae | ko |
dc.contributor.author | Lee, In Gyu | ko |
dc.contributor.author | Cho, Byung Jin | ko |
dc.contributor.author | Hwang, Wan Sik | ko |
dc.date.accessioned | 2020-12-16T08:50:05Z | - |
dc.date.available | 2020-12-16T08:50:05Z | - |
dc.date.created | 2020-11-23 | - |
dc.date.issued | 2021-01 | - |
dc.identifier.citation | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v.121 | - |
dc.identifier.issn | 1369-8001 | - |
dc.identifier.uri | http://hdl.handle.net/10203/278573 | - |
dc.description.abstract | Polycrystalline n-type beta-Ga2O3 thin films with a thickness of 100 nm are demonstrated via the sputtering process followed by the spin-on-glass Sn-doping technique. The thin films are used as an active layer for power electronics and ultraviolet optoelectronics. In the present study, they are implemented in back-gated metal-oxide semiconductor field-effect transistors with a 300-nm thick SiO2 gate dielectric. The fabricated device shows typical power electronic properties with high breakdown voltages (as high as 216 V). The device also shows a clear photoresponse to the 254-nm light illuminations, indicating that the polycrystalline beta-Ga2O3 thin film is also suitable for solar-blind photodetectors. | - |
dc.language | English | - |
dc.publisher | ELSEVIER SCI LTD | - |
dc.title | Electrical and photocurrent properties of a polycrystalline Sn-doped beta-Ga2O3 thin film | - |
dc.type | Article | - |
dc.identifier.wosid | 000585293900004 | - |
dc.identifier.scopusid | 2-s2.0-85090714354 | - |
dc.type.rims | ART | - |
dc.citation.volume | 121 | - |
dc.citation.publicationname | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | - |
dc.identifier.doi | 10.1016/j.mssp.2020.105430 | - |
dc.contributor.localauthor | Cho, Byung Jin | - |
dc.contributor.nonIdAuthor | Yoon, Youngbin | - |
dc.contributor.nonIdAuthor | Kim, Sunjae | - |
dc.contributor.nonIdAuthor | Lee, In Gyu | - |
dc.contributor.nonIdAuthor | Hwang, Wan Sik | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Ga2O3 | - |
dc.subject.keywordAuthor | Thin film | - |
dc.subject.keywordAuthor | Spin-on-glass | - |
dc.subject.keywordAuthor | Metal-oxide semiconductor field-effect transistors | - |
dc.subject.keywordAuthor | Solar-blind photodetectors | - |
dc.subject.keywordAuthor | Sputtering | - |
dc.subject.keywordPlus | LAYERS | - |
dc.subject.keywordPlus | POWER | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | PHOTODETECTORS | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | BETA | - |
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