DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shim, Gi Woong | ko |
dc.contributor.author | Hong, Woonggi | ko |
dc.contributor.author | Cha, Jun-Hwe | ko |
dc.contributor.author | Park, Jung Hwan | ko |
dc.contributor.author | Lee, Keon Jae | ko |
dc.contributor.author | Choi, Sung-Yool | ko |
dc.date.accessioned | 2020-12-10T08:50:13Z | - |
dc.date.available | 2020-12-10T08:50:13Z | - |
dc.date.created | 2020-01-20 | - |
dc.date.issued | 2020-09 | - |
dc.identifier.citation | ADVANCED MATERIALS, v.32, no.35, pp.1907133 | - |
dc.identifier.issn | 0935-9648 | - |
dc.identifier.uri | http://hdl.handle.net/10203/278144 | - |
dc.description.abstract | As the need for super-high-resolution displays with various form factors has increased, it has become necessary to produce high-performance thin-film transistors (TFTs) that enable faster switching and higher current driving of each pixel in the display. Over the past few decades, hydrogenated amorphous silicon (a-Si:H) has been widely utilized as a TFT channel material. More recently, to meet the requirement of new types of displays such as organic light-emitting diode displays, and also to overcome the performance and reliability issues of a-Si:H, low-temperature polycrystalline silicon and amorphous oxide semiconductors have partly replaced a-Si:H channel materials. Basic material properties and device structures of TFTs in commercial displays are explored, and then the potential of atomically thin layered transition metal dichalcogenides as next-generation channel materials is discussed. | - |
dc.language | English | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.title | TFT Channel Materials for Display Applications: From Amorphous Silicon to Transition Metal Dichalcogenides | - |
dc.type | Article | - |
dc.identifier.wosid | 000563522000001 | - |
dc.identifier.scopusid | 2-s2.0-85081749818 | - |
dc.type.rims | ART | - |
dc.citation.volume | 32 | - |
dc.citation.issue | 35 | - |
dc.citation.beginningpage | 1907133 | - |
dc.citation.publicationname | ADVANCED MATERIALS | - |
dc.identifier.doi | 10.1002/adma.201907166 | - |
dc.contributor.localauthor | Lee, Keon Jae | - |
dc.contributor.localauthor | Choi, Sung-Yool | - |
dc.contributor.nonIdAuthor | Park, Jung Hwan | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | contact resistance | - |
dc.subject.keywordAuthor | device structures | - |
dc.subject.keywordAuthor | display technologies | - |
dc.subject.keywordAuthor | thin film transistors | - |
dc.subject.keywordAuthor | transition metal dichalcogenides | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | MOLYBDENUM-DISULFIDE | - |
dc.subject.keywordPlus | OXIDE SEMICONDUCTOR | - |
dc.subject.keywordPlus | INSTABILITY MECHANISMS | - |
dc.subject.keywordPlus | ELECTRONIC-STRUCTURE | - |
dc.subject.keywordPlus | CARRIER TRANSPORT | - |
dc.subject.keywordPlus | MONOLAYER MOS2 | - |
dc.subject.keywordPlus | WAFER-SCALE | - |
dc.subject.keywordPlus | LARGE-AREA | - |
dc.subject.keywordPlus | HIGH-MOBILITY | - |
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