Current-induced magnetization switching of synthetic antiferromagnetic free layer in magnetic tunnel junctions

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Spin transport in a magnetic tunnel junction with a synthetic antiferromagnetic (SAF) free layer is investigated using the drift-diffusion model. Although the diffusive transport is inappropriate for the MgO tunnel barrier, the drift-diffusion model is found to capture the core features of in-plane spin-transfer torque (STT) through the tunnel barrier, and more importantly, it can describe non-negligible STT exerting on two ferromagnets in a SAF-free layer. STT in a SAF-free layer substantially changes the magnetization dynamics and induces a shift of the critical switching current. STT in a SAF-free layer suppresses current-induced parallel-to-antiparallel switching, whereas it encourages antiparallel-to-parallel switching.
Publisher
AMER INST PHYSICS
Issue Date
2011-04
Language
English
Article Type
Article
Citation

JOURNAL OF APPLIED PHYSICS, v.109, no.7

ISSN
0021-8979
DOI
10.1063/1.3562214
URI
http://hdl.handle.net/10203/277635
Appears in Collection
PH-Journal Papers(저널논문)
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