In Situ Observation of Voltage-Induced Multilevel Resistive Switching in Solid Electrolyte Memory

Abstract

Solid electrolyte memories utilizing voltage-induced resistance change display the capability of multilevel switching, but understanding of the microscopic switching mechanism still is incomplete. Here, in situ TEM observations of voltage-induced changes in the microstructure of a solid electrolyte memory are reported, revealing that the multilevel switching originates from the growth of multiple conducting filaments with nanometer-sized diameter and spacing.