Anomalous spin-orbit torque switching due to field-like torque-assisted domain wall reflection

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dc.contributor.authorYoon, Jungbumko
dc.contributor.authorLee, Seo-Wonko
dc.contributor.authorKwon, Jae Hyunko
dc.contributor.authorLee, Jong Minko
dc.contributor.authorSon, Jaesungko
dc.contributor.authorQiu, Xuepengko
dc.contributor.authorLee, Kyung-Jinko
dc.contributor.authorYang, Hyunsooko
dc.date.accessioned2020-11-20T08:30:18Z-
dc.date.available2020-11-20T08:30:18Z-
dc.date.created2020-11-18-
dc.date.created2020-11-18-
dc.date.issued2017-04-
dc.identifier.citationSCIENCE ADVANCES, v.3, no.4-
dc.identifier.issn2375-2548-
dc.identifier.urihttp://hdl.handle.net/10203/277442-
dc.description.abstractSpin-orbit torques (SOTs) allow the electrical control of magnetic states. Current-induced SOT switching of the perpendicular magnetization is of particular technological importance. The SOT consists of damping-like and field-like torques, and understanding the combined effects of these two torque components is required for efficient SOT switching. Previous quasi-static measurements have reported an increased switching probability with the width of current pulses, as predicted considering the damping-like torque alone. We report a decreased switching probability at longer pulse widths, based on time-resolved measurements. Micromagnetic analysis reveals that this anomalous SOT switching results from domain wall reflections at sample edges. The domain wall reflection was found to strongly depend on the field-like torque and its relative sign to the damping-like torque. Our result demonstrates a key role of the field-like torque in deterministic SOT switching and the importance of the sign correlation of the two torque components, which may shed light on the SOT switching mechanism.-
dc.languageEnglish-
dc.publisherAMER ASSOC ADVANCEMENT SCIENCE-
dc.titleAnomalous spin-orbit torque switching due to field-like torque-assisted domain wall reflection-
dc.typeArticle-
dc.identifier.wosid000401954800057-
dc.identifier.scopusid2-s2.0-85021250214-
dc.type.rimsART-
dc.citation.volume3-
dc.citation.issue4-
dc.citation.publicationnameSCIENCE ADVANCES-
dc.identifier.doi10.1126/sciadv.1603099-
dc.contributor.localauthorLee, Kyung-Jin-
dc.contributor.nonIdAuthorYoon, Jungbum-
dc.contributor.nonIdAuthorLee, Seo-Won-
dc.contributor.nonIdAuthorKwon, Jae Hyun-
dc.contributor.nonIdAuthorLee, Jong Min-
dc.contributor.nonIdAuthorSon, Jaesung-
dc.contributor.nonIdAuthorQiu, Xuepeng-
dc.contributor.nonIdAuthorYang, Hyunsoo-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordPlusDYNAMICS-
dc.subject.keywordPlusSEMICONDUCTORS-
dc.subject.keywordPlusTEMPERATURE-
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