DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Hyeonggyun | ko |
dc.contributor.author | Yun, Jeonghoon | ko |
dc.contributor.author | Gao, Min | ko |
dc.contributor.author | Kim, Hyeok | ko |
dc.contributor.author | Cho, Minkyu | ko |
dc.contributor.author | Park, Inkyu | ko |
dc.date.accessioned | 2020-11-16T02:55:29Z | - |
dc.date.available | 2020-11-16T02:55:29Z | - |
dc.date.created | 2020-11-03 | - |
dc.date.created | 2020-11-03 | - |
dc.date.created | 2020-11-03 | - |
dc.date.issued | 2020-09 | - |
dc.identifier.citation | ACS APPLIED MATERIALS & INTERFACES, v.12, no.39, pp.43614 - 43623 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | http://hdl.handle.net/10203/277291 | - |
dc.description.abstract | This article reports a nanoporous silicon (Si) thinfilm-based high-performance and low-power hydrogen (H-2) sensor fabricated by metal-assisted chemical etching (MaCE). The nanoporous Si thin film treated with Pd-based MaCE showed improvement over a flat Si thin film sensor in H-2 response (Delta I/I-0 = 4.36% -> 12.4% for 0.1% H-2). Furthermore, it was verified that the combination of thermal annealing of Pd and subsequent MaCE on the Si thin film synergistically enhances the H-2 sensitivity of the sensor by 65 times as compared to the flat Si thin film sensor (Delta I/I-0 = 4.36% -> 285% for 0.1% H-2). This sensor also showed a very low operating power of 1.62 mu W. After the thermal treatment, densely packed Pd nanoparticles agglomerate due to dewetting, which results in a higher surface-to-volume ratio by well-defined etched holes, leading to an increase in sensor response. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Nanoporous Silicon Thin Film-Based Hydrogen Sensor Using Metal-Assisted Chemical Etching with Annealed Palladium Nanoparticles | - |
dc.type | Article | - |
dc.identifier.wosid | 000577111700027 | - |
dc.identifier.scopusid | 2-s2.0-85092681594 | - |
dc.type.rims | ART | - |
dc.citation.volume | 12 | - |
dc.citation.issue | 39 | - |
dc.citation.beginningpage | 43614 | - |
dc.citation.endingpage | 43623 | - |
dc.citation.publicationname | ACS APPLIED MATERIALS & INTERFACES | - |
dc.identifier.doi | 10.1021/acsami.0c10785 | - |
dc.contributor.localauthor | Park, Inkyu | - |
dc.contributor.nonIdAuthor | Kim, Hyeonggyun | - |
dc.contributor.nonIdAuthor | Yun, Jeonghoon | - |
dc.contributor.nonIdAuthor | Kim, Hyeok | - |
dc.contributor.nonIdAuthor | Cho, Minkyu | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | hydrogen sensor | - |
dc.subject.keywordAuthor | palladium nanoparticle | - |
dc.subject.keywordAuthor | metal-assisted chemical etching | - |
dc.subject.keywordAuthor | porous silicon | - |
dc.subject.keywordAuthor | silicon microwire | - |
dc.subject.keywordPlus | GAS SENSOR | - |
dc.subject.keywordPlus | NANOWIRE | - |
dc.subject.keywordPlus | ARRAYS | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.