Nanoporous Silicon Thin Film-Based Hydrogen Sensor Using Metal-Assisted Chemical Etching with Annealed Palladium Nanoparticles

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 32
  • Download : 0
This article reports a nanoporous silicon (Si) thinfilm-based high-performance and low-power hydrogen (H-2) sensor fabricated by metal-assisted chemical etching (MaCE). The nanoporous Si thin film treated with Pd-based MaCE showed improvement over a flat Si thin film sensor in H-2 response (Delta I/I-0 = 4.36% -> 12.4% for 0.1% H-2). Furthermore, it was verified that the combination of thermal annealing of Pd and subsequent MaCE on the Si thin film synergistically enhances the H-2 sensitivity of the sensor by 65 times as compared to the flat Si thin film sensor (Delta I/I-0 = 4.36% -> 285% for 0.1% H-2). This sensor also showed a very low operating power of 1.62 mu W. After the thermal treatment, densely packed Pd nanoparticles agglomerate due to dewetting, which results in a higher surface-to-volume ratio by well-defined etched holes, leading to an increase in sensor response.
Publisher
AMER CHEMICAL SOC
Issue Date
2020-09
Language
English
Article Type
Article
Citation

ACS APPLIED MATERIALS & INTERFACES, v.12, no.39, pp.43614 - 43623

ISSN
1944-8244
DOI
10.1021/acsami.0c10785
URI
http://hdl.handle.net/10203/277291
Appears in Collection
ME-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0