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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Conference Papers(학술회의논문)

Highly Stable High Mobility Oxide TFT by Optimizing Hydrogen Incorporation through PE-ALD and Thermal-ALD for Gate Insulator

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dc.contributor.authorKo, Jong Beomko
dc.contributor.authorCho, Seong-Inko
dc.contributor.authorLee, SeungHeeko
dc.contributor.authorPark, Sang-Hee Koko
dc.date.accessioned2020-10-20T00:55:38Z-
dc.date.available2020-10-20T00:55:38Z-
dc.date.created2020-10-19-
dc.date.created2020-10-19-
dc.date.issued2020-08-25-
dc.identifier.citationIMID 2020-
dc.identifier.urihttp://hdl.handle.net/10203/276680-
dc.languageEnglish-
dc.publisherThe Korean Information Display Society-
dc.titleHighly Stable High Mobility Oxide TFT by Optimizing Hydrogen Incorporation through PE-ALD and Thermal-ALD for Gate Insulator-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnameIMID 2020-
dc.identifier.conferencecountryKO-
dc.identifier.conferencelocationOnline Conference-
dc.contributor.localauthorPark, Sang-Hee Ko-
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MS-Conference Papers(학술회의논문)
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