Analysis of Nitrogen Recombination Activity on Silicon Dioxide with Stagnation Heat-Transfer

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Investigation of surface recombination activity of nitrogen on certain materials is crucial in the design of hypersonic re-entry vehicles. In the present work, an experimental study using a conventional shock tube facility has been conducted to investigate the phenomena of nitrogen recombination. Stagnation heat-transfer measurements were conducted behind reflected shock waves in a dissociated shock-tube flow for a mixture of 20% nitrogen and 80% argon. A platinum thin-film gauge was used to measure the stagnation heat-transfer in a shock heated gas mixture under a well-defined test condition. The surface of the heat-transfer gauge was coated with silicon dioxide (SiO2), the principal material used in thermal protection systems (TPS) for the hypersonic vehicles. Spectroscopic analyses were performed for in-depth characterization of the initial surface condition of the test specimen. Recombination activity behavior of nitrogen was evaluated by combining the heat-transfer data with catalytic heat transfer theories. The nitrogen recombination efficiency of silicon dioxide is found to be from 0.0026 to 0.035 at surface roughness factors of 1.01 to 1.10. Compared to the oxygen recombination activity, the nitrogen recombination activity showed a more than five times higher sensitivity to the roughness factor of the SiO2-coated surface.
Pergamon Press Ltd.
Issue Date

Acta Astronautica, v.177, pp.386 - 397

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AE-Journal Papers(저널논문)
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