Radiation-tolerant unit MOSFET hardened against single event effect and total ionization dose effect단일 사건 현상과 누적 이온화 현상에 강인한 내방사선 입체 단위 모스펫
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Hee Chul | ko |
| dc.contributor.author | Roh, Young Tak | ko |
| dc.date.accessioned | 2020-10-14T05:55:42Z | - |
| dc.date.available | 2020-10-14T05:55:42Z | - |
| dc.identifier.uri | http://hdl.handle.net/10203/276561 | - |
| dc.description.abstract | Provided is a radiation-tolerant 3D unit MOSFET having at least one selected from a dummy drain (DD), an N-well layer (NW), a deep N-well layer (DNW), and a P+ layer to minimize an influence by a total ionization dose effect and an influence by a single event effect. | - |
| dc.title | Radiation-tolerant unit MOSFET hardened against single event effect and total ionization dose effect | - |
| dc.title.alternative | 단일 사건 현상과 누적 이온화 현상에 강인한 내방사선 입체 단위 모스펫 | - |
| dc.type | Patent | - |
| dc.type.rims | PAT | - |
| dc.contributor.localauthor | Lee, Hee Chul | - |
| dc.contributor.nonIdAuthor | Roh, Young Tak | - |
| dc.contributor.assignee | KAIST | - |
| dc.identifier.iprsType | 특허 | - |
| dc.identifier.patentApplicationNumber | 16191250 | - |
| dc.identifier.patentRegistrationNumber | 10756167 | - |
| dc.date.application | 2018-11-14 | - |
| dc.date.registration | 2020-08-25 | - |
| dc.publisher.country | US | - |
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