DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Jongwon | ko |
dc.contributor.author | Choi, Sunkyu | ko |
dc.contributor.author | Kim, Seong-Yeon | ko |
dc.contributor.author | Lee, Jooseok | ko |
dc.contributor.author | Yang, Kyounghoon | ko |
dc.date.accessioned | 2020-10-08T04:55:03Z | - |
dc.date.available | 2020-10-08T04:55:03Z | - |
dc.date.created | 2020-09-23 | - |
dc.date.created | 2020-09-23 | - |
dc.date.issued | 2020-09 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.41, no.9, pp.1308 - 1311 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/276502 | - |
dc.description.abstract | In this letter, we propose an area-efficient series-connected resonant tunneling diode pair device (SCRTD) to utilize as a binary neuron device in cellular neural networks (CNNs). The proposed SCRTD (P-SCRTD) consists of two RTDs interconnected by a floating metal layer with a high-doped epitaxial layer. The P-SCRTD shows a 48 % reduction in area by eliminating the isolation area in the conventional SCRTD (C-SCRTD) owing to the symmetrical I-V characteristic of the RTD, without any performance penalty on the DC and RF characteristics by means of adopting the floating metal layer, compared to the C-SCRTD. CNN application of the P-SCRTD is investigated, showing inherent threshold operation and high-speed (12.5 Gbps) low-power (21 mW) performance, despite using the 2 mu m technology node, for a unit cell for edge extraction. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Area-Efficient Series-Connected Resonant Tunneling Diode Pair as Binary Neuron in Cellular Neural Network | - |
dc.type | Article | - |
dc.identifier.wosid | 000564210900008 | - |
dc.identifier.scopusid | 2-s2.0-85090998436 | - |
dc.type.rims | ART | - |
dc.citation.volume | 41 | - |
dc.citation.issue | 9 | - |
dc.citation.beginningpage | 1308 | - |
dc.citation.endingpage | 1311 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.identifier.doi | 10.1109/LED.2020.3008164 | - |
dc.contributor.localauthor | Yang, Kyounghoon | - |
dc.contributor.nonIdAuthor | Lee, Jongwon | - |
dc.contributor.nonIdAuthor | Choi, Sunkyu | - |
dc.contributor.nonIdAuthor | Kim, Seong-Yeon | - |
dc.contributor.nonIdAuthor | Lee, Jooseok | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Cellular neural networks | - |
dc.subject.keywordAuthor | negative resistance devices | - |
dc.subject.keywordAuthor | resonant tunneling diodes | - |
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