AlGaN Deep-Ultraviolet Light-Emitting Diodes with Localized Surface Plasmon Resonance by a High-Density Array of 40 nm Al Nanoparticles

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We present a remarkable improvement in the efficiency of AlGaN deep-ultraviolet light-emitting diodes (LEDs) enabled by the coupling of localized surface plasmon resonance (LSPR) mediated by a high-density array of Al nanoparticles (NPs). The Al NPs with an average diameter of similar to 40 nm were uniformly distributed near the Al0.43Ga0.57N/Al0.50Ga0.50N multiple quantum well active region for coupling 285 nm emission by block copolymer lithography. The internal quantum efficiency is enhanced by 57.7% because of the decreased radiative recombination lifetime by the LSPR. As a consequence, the AlGaN LEDs with an array of Al NPs show 33.3% enhanced electroluminescence with comparable electrical properties to those of reference LEDs without Al NPs.
Publisher
AMER CHEMICAL SOC
Issue Date
2020-08
Language
English
Article Type
Article
Citation

ACS APPLIED MATERIALS & INTERFACES, v.12, no.32, pp.36339 - 36346

ISSN
1944-8244
DOI
10.1021/acsami.0c08916
URI
http://hdl.handle.net/10203/276390
Appears in Collection
PH-Journal Papers(저널논문)
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