DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hwang, Junghyeon | ko |
dc.contributor.author | Goh, Youngin | ko |
dc.contributor.author | Jeon, Sanghun | ko |
dc.date.accessioned | 2020-08-18T00:55:07Z | - |
dc.date.available | 2020-08-18T00:55:07Z | - |
dc.date.created | 2020-08-10 | - |
dc.date.created | 2020-08-10 | - |
dc.date.created | 2020-08-10 | - |
dc.date.issued | 2020-08 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.41, no.8, pp.1193 - 1196 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/275843 | - |
dc.description.abstract | The various structures of ferroelectric tunnel junctions (FTJs) are widely studied. Among them, metal-ferroelectric-semiconductor (MFS) FTJs show great tunneling electroresistance (TER) ratio by forming a depletion region. However, the poor ferroelectricity of hafnia on semiconductor electrodes degrades the TER ratio. This study employed high-pressure annealing with forming gas to improve the ferroelectric properties of MFS FTJs. We achieved a high 2Pr value (47.54 mu c/cm(2)) and large TER ratio (22) in MFS FTJ for a 6 nmthick hafnia layer annealed at high pressure (200 atm) with forming gas. This work helps improve the quality of interface between a semiconductor and ferroelectric layer to increase the ferroelectricity of MFS stack devices. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Effect of Forming Gas High-Pressure Annealing on Metal-Ferroelectric-Semiconductor Hafnia Ferroelectric Tunnel Junction | - |
dc.type | Article | - |
dc.identifier.wosid | 000552970000011 | - |
dc.identifier.scopusid | 2-s2.0-85089554365 | - |
dc.type.rims | ART | - |
dc.citation.volume | 41 | - |
dc.citation.issue | 8 | - |
dc.citation.beginningpage | 1193 | - |
dc.citation.endingpage | 1196 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.identifier.doi | 10.1109/LED.2020.3001639 | - |
dc.contributor.localauthor | Jeon, Sanghun | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Ferroelectric tunnel junction | - |
dc.subject.keywordAuthor | HfZrO2 | - |
dc.subject.keywordAuthor | high-pressure annealing | - |
dc.subject.keywordAuthor | forming gas | - |
dc.subject.keywordPlus | HF0.5ZR0.5O2 FILMS | - |
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