SALE: Smartly Allocating Low-Cost Many-Bit ECC for Mitigating Read and Write Errors in STT-RAM Caches

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dc.contributor.authorQureshi, Muhammad Avaisko
dc.contributor.authorPark, Jungwooko
dc.contributor.authorKim, Soontaeko
dc.date.accessioned2020-07-21T08:55:09Z-
dc.date.available2020-07-21T08:55:09Z-
dc.date.created2020-07-15-
dc.date.created2020-07-15-
dc.date.created2020-07-15-
dc.date.issued2020-06-
dc.identifier.citationIEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, v.28, no.6, pp.1357 - 1370-
dc.identifier.issn1063-8210-
dc.identifier.urihttp://hdl.handle.net/10203/275582-
dc.description.abstractSpin-transfer torque RAM (STT-RAM) is a future technology for ON-chip caches. However, it suffers from high read and write error rates. Concurrently dealing with these errors is quite challenging and incurs large performance overhead. This article proposes a smartly allocating low-cost many-bit ECC (SALE) scheme, which makes use of the low-cost many-bit error correction coding (ECC) to overcome this performance overhead. The low-cost many-bit ECC can fix many errors with low logic complexity and latency overheads. However, it requires a large number of parity bits. Therefore, SALE smartly uses low-cost many-bit ECC for only a certain type of cache lines and manages the corresponding large number of parity bits in the data array. SALE also introduces an ECC-free partition to reduce the ECC storage requirement for the STT-RAM caches. The cache lines belonging to an ECC-free partition do not have dedicated storage space for the ECC parity bits, thereby reducing the ECC storage requirement for the STT-RAM caches. Our experimental results demonstrate that SALE achieves performance close to that of an error-free cache by improving performance by 13% (16%) over the baseline scheme in single-core (quad-core) systems while requiring 50% less storage space for the ECC parity bits.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleSALE: Smartly Allocating Low-Cost Many-Bit ECC for Mitigating Read and Write Errors in STT-RAM Caches-
dc.typeArticle-
dc.identifier.wosid000542929200002-
dc.identifier.scopusid2-s2.0-85085945244-
dc.type.rimsART-
dc.citation.volume28-
dc.citation.issue6-
dc.citation.beginningpage1357-
dc.citation.endingpage1370-
dc.citation.publicationnameIEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS-
dc.identifier.doi10.1109/TVLSI.2020.2977131-
dc.contributor.localauthorKim, Soontae-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorError correction codes-
dc.subject.keywordAuthorMagnetic tunneling-
dc.subject.keywordAuthorSwitches-
dc.subject.keywordAuthorRandom access memory-
dc.subject.keywordAuthorReliability-
dc.subject.keywordAuthorSystem-on-chip-
dc.subject.keywordAuthorWriting-
dc.subject.keywordAuthorFalse-sensing (FS) errors-
dc.subject.keywordAuthororthogonal Latin square codes (OLSC)-
dc.subject.keywordAuthorread disturbance (RD) errors-
dc.subject.keywordAuthorspin-transfer torque RAM (STT-RAM)-
dc.subject.keywordAuthorwrite errors-
dc.subject.keywordPlusSENSING CIRCUIT-
dc.subject.keywordPlusRELIABILITY-
dc.subject.keywordPlusAREA-
dc.subject.keywordPlusPROTECTION-
dc.subject.keywordPlusDESIGN-
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