Performance degradation in graphene-ZnO barristors due to graphene edge contact

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The physical and chemical characteristics of the edge states of graphene have been studied extensively as they affect the electrical properties of graphene significantly. Likewise, the edge states of graphene in contact with semiconductors or transition-metal dichalcogenides (TMDs) are expected to have a strong influence on the electrical properties of the resulting Schottky junction devices. We found that the edge states of graphene form chemical bonds with the ZnO layer, which limits the modulation of the Fermi level at the graphene-semiconductor junction, in a manner similar to Fermi level pinning in silicon devices. Therefore, we propose that graphene-based Schottky contact should be accomplished with minimal edge contact to reduce the limits imposed on the Fermi level modulation; this hypothesis has been experimentally verified, and its microscopic mechanism is further theoretically examined.
Publisher
AMER CHEMICAL SOC
Issue Date
2020-06
Language
English
Article Type
Article
Citation

ACS APPLIED MATERIALS & INTERFACES, v.12, no.25, pp.28768 - 28774

ISSN
1944-8244
DOI
10.1021/acsami.0c04325
URI
http://hdl.handle.net/10203/275566
Appears in Collection
EE-Journal Papers(저널논문)
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