High-k HfxZr1-xO2 Ferroelectric Insulator by Utilizing High Pressure Anneal

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dc.contributor.authorDas, Dipjyotiko
dc.contributor.authorJeon, Sanghunko
dc.date.accessioned2020-07-08T08:55:05Z-
dc.date.available2020-07-08T08:55:05Z-
dc.date.created2020-06-23-
dc.date.created2020-06-23-
dc.date.issuedACCEPT-
dc.identifier.citationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.67, no.6, pp.2489 - 2494-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10203/275357-
dc.description.abstractIn this article, we report the fabrication of Zr-rich high-k ferroelectric hafnium zirconium oxide (HZO) capacitor with TiN as the top and bottom electrodes demonstrating an equivalent oxide thickness (EOT) of 5.7 angstrom and remanent polarization (P-r) of similar to 16 mu C/cm(2). High-k value and low EOT was achieved by utilizing multiphase region of HZO as well as high pressure post metallization annealing (HPPMA). Despite the high-k value of Zr-rich HZO films, the emergence of multiphase region at higher physical thickness when annealed using rapid thermal annealing (RTA) limits its EOT value. On the contrary, multiphase emerges at a smaller physical thickness in HPPMA due to the formation of more o-phase as revealed by grazing incidence X-ray diffractometer (GIXRD). The smaller physical thickness of HPPMA together with the demonstration of significantly higher dielectric constant (>50) by HZO in the vicinity of multiphase, was therefore, found to be very effective in reducing the EOT.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleHigh-k HfxZr1-xO2 Ferroelectric Insulator by Utilizing High Pressure Anneal-
dc.typeArticle-
dc.identifier.wosid000538163700042-
dc.identifier.scopusid2-s2.0-85085569084-
dc.type.rimsART-
dc.citation.volume67-
dc.citation.issue6-
dc.citation.beginningpage2489-
dc.citation.endingpage2494-
dc.citation.publicationnameIEEE TRANSACTIONS ON ELECTRON DEVICES-
dc.identifier.doi10.1109/TED.2020.2985635-
dc.contributor.localauthorJeon, Sanghun-
dc.contributor.nonIdAuthorDas, Dipjyoti-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorEquivalent oxide thickness (EOT)-
dc.subject.keywordAuthorhafnium zirconium oxide (HZO)-
dc.subject.keywordAuthorhigh pressure post metallization annealing (HPPMA)-
dc.subject.keywordAuthormultiphase-
dc.subject.keywordAuthorrapid thermal annealing (RTA)-
dc.subject.keywordPlusEQUIVALENT OXIDE THICKNESS-
dc.subject.keywordPlusMORPHOTROPIC PHASE-BOUNDARY-
dc.subject.keywordPlusSOLID-SOLUTION SYSTEMS-
dc.subject.keywordPlusDIELECTRIC-PROPERTIES-
dc.subject.keywordPlusFILMS-
dc.subject.keywordPlusCAPACITORS-
dc.subject.keywordPlusMEMORY-
dc.subject.keywordPlusNM-
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