Deterministic quantum emitter operating at room temperature in optical communication wavelength using intersubband transition of nitride-based semiconductor quantum dot, method of fabricating same, and operating method thereof질화물 기반 반도체 양자점의 하위밴드 전이를 이용한 광통신파장에서 상온 동작 가능한 결정적 양자광원과 그 제작 방법 및 동작 방법

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dc.contributor.authorCho, Yong-Hoonko
dc.contributor.authorYeo, Hwanseopko
dc.contributor.authorCho, JongHoiko
dc.date.accessioned2020-07-03T03:20:21Z-
dc.date.available2020-07-03T03:20:21Z-
dc.identifier.urihttp://hdl.handle.net/10203/275185-
dc.description.abstractDisclosed are a deterministic quantum emitter operating at room temperature in an optical communication wavelength using the intersubband transition of a nitride-based semiconductor quantum dot, a method of fabricating the same, and an operating method thereof. A method of fabricating a quantum emitter includes forming a three-dimensional (3-D) structure in a substrate, forming an n type-doped thin film at the upper part of the 3-D structure, forming a quantum dot over the n type-doped thin film, regrowing the 3-D structure in order to use the 3-D structure as an optical structure, depositing a metal thin film at a vertex of the 3-D structure, and connecting electrodes to an n type-doped area and the metal thin film, respectively. A carrier may be captured in the quantum dot by applying a voltage to the connected electrodes. The quantum emitter may be driven by optically exciting the quantum dot.-
dc.titleDeterministic quantum emitter operating at room temperature in optical communication wavelength using intersubband transition of nitride-based semiconductor quantum dot, method of fabricating same, and operating method thereof-
dc.title.alternative질화물 기반 반도체 양자점의 하위밴드 전이를 이용한 광통신파장에서 상온 동작 가능한 결정적 양자광원과 그 제작 방법 및 동작 방법-
dc.typePatent-
dc.type.rimsPAT-
dc.contributor.localauthorCho, Yong-Hoon-
dc.contributor.nonIdAuthorYeo, Hwanseop-
dc.contributor.nonIdAuthorCho, JongHoi-
dc.contributor.assigneeKAIST-
dc.identifier.iprsType특허-
dc.identifier.patentApplicationNumber16036556-
dc.identifier.patentRegistrationNumber10,586,887-
dc.date.application2018-07-16-
dc.date.registration2020-03-10-
dc.publisher.countryUS-
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PH-Patent(특허)
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