Selective Pore-Sealing of Highly Porous Ultralow-k dielectrics for ULSI Interconnects by Cyclic Initiated Chemical Vapor Deposition Process

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A selective pore-sealing of highly porous ultralow-k (pULK) dielectrics by a cyclic initiated CVD (iCVD) process has been successfully developed. A negligible increase of the pULK thickness and the k value was achieved even after the hermetic pore-sealing. The pore-sealed pULK films show low leakage current and excellent dielectric reliability, comparable to the commercialized low-k dielectric. The selective pore-sealing process does not deposit the pore-sealing layer on Cu surface. The porosity difference between pULK and Cu surfaces is attributed to the origin of the selectivity in the cyclic iCVD process.
Publisher
IEEE
Issue Date
2018-06
Language
English
Citation

38th IEEE Symposium on VLSI Technology, pp.73 - 74

DOI
10.1109/VLSIT.2018.8510630
URI
http://hdl.handle.net/10203/274868
Appears in Collection
CBE-Conference Papers(학술회의논문)EE-Conference Papers(학술회의논문)
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