Structure Engineering with ZrO2 Thin Film for Highly Conducting Electrospun In2O3 Nanowire Field Effect Transistor
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Park, Hyungjin | ko |
| dc.contributor.author | Lee, In Jun | ko |
| dc.contributor.author | Kim, Yun Hyeok | ko |
| dc.contributor.author | Bae, Byeong-Soo | ko |
| dc.date.accessioned | 2020-06-02T02:20:54Z | - |
| dc.date.available | 2020-06-02T02:20:54Z | - |
| dc.date.created | 2020-05-28 | - |
| dc.date.created | 2020-05-28 | - |
| dc.date.created | 2020-05-28 | - |
| dc.date.issued | 2016-12 | - |
| dc.identifier.citation | 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/274448 | - |
| dc.description.abstract | In O2 atmosphere, 600°C-annealed electrospun ZrO2 nanowire field-effect transistor (NWFET) exhibits conductive behavior with large off-current (loft) and high subthreshold slope (S.S.). Solution-processed Z/O2 thin film is utilized to control and optimize conducting IN203 NWFET and underlying mechanism is studied. | - |
| dc.language | English | - |
| dc.publisher | Society for Information Display | - |
| dc.title | Structure Engineering with ZrO2 Thin Film for Highly Conducting Electrospun In2O3 Nanowire Field Effect Transistor | - |
| dc.type | Conference | - |
| dc.identifier.scopusid | 2-s2.0-85050492806 | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | 23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 | - |
| dc.identifier.conferencecountry | JA | - |
| dc.identifier.conferencelocation | Fukuoka | - |
| dc.contributor.localauthor | Bae, Byeong-Soo | - |
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