Fabrication and Characterization of Cu2ZnSnSe4 Thin-Film Solar Cells using a Single-Stage Co-Evaporation Method: Effects of Film Growth Temperatures on Device Performances

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dc.contributor.authorRehan, Muhammadko
dc.contributor.authorJeon, Hyeonminko
dc.contributor.authorCho, Yunaeko
dc.contributor.authorCho, Arako
dc.contributor.authorKim, Kihwanko
dc.contributor.authorCho, Jun-Sikko
dc.contributor.authorYun, Jae Hoko
dc.contributor.authorAhn, Seungkyuko
dc.contributor.authorGwak, Jihyeko
dc.contributor.authorShin, Donghyeopko
dc.date.accessioned2020-05-20T09:20:13Z-
dc.date.available2020-05-20T09:20:13Z-
dc.date.created2020-05-18-
dc.date.issued2020-03-
dc.identifier.citationENERGIES, v.13, no.6-
dc.identifier.issn1996-1073-
dc.identifier.urihttp://hdl.handle.net/10203/274247-
dc.description.abstractKesterite-structured Cu2ZnSnSe4 (CZTSe) is considered as one of the Earth-abundant and non-toxic photovoltaic materials. CZTSe films have been prepared using a single-step co-evaporation method at a relatively low temperature (i.e., below 500 degrees C). Due to the volatile nature of tin-selenide, the control over substrate temperature (i.e., growth temperature) is very important in terms of the deposition of high-quality CZTSe films. In this regard, the effects of growth temperatures on the CZTSe film morphology were investigated. The suitable temperature range to deposit CZTSe films with Cu-poor and Zn-rich compositions was 380-480 degrees C. As the temperature increased, the surface roughness of the CZTSe film decreased, which could improve p/n junction properties and associated device performances. Particularly, according to capacitance-voltage (C-V) and derived-level capacitance profiling (DLCP) measurements, the density of interfacial defects of CZTSe film grown at 480 degrees C showed the lowest value, of the order of similar to 3 x 10(15) cm(-3). Regardless of applied growth temperatures, the formation of a MoSe2 layer was rarely observed, since the growth temperature was not high enough to have a reaction between Mo back contact layers and CZTSe absorber layers. As a result, the photovoltaic (PV) device with CZTSe film grown at 480 degrees C yielded the best power conversion efficiency of 6.47%. It is evident that the control over film growth temperature is a critical factor for obtaining high-quality CZTSe film prepared by one-step process.-
dc.languageEnglish-
dc.publisherMDPI-
dc.titleFabrication and Characterization of Cu2ZnSnSe4 Thin-Film Solar Cells using a Single-Stage Co-Evaporation Method: Effects of Film Growth Temperatures on Device Performances-
dc.typeArticle-
dc.identifier.wosid000528727500021-
dc.identifier.scopusid2-s2.0-85081980829-
dc.type.rimsART-
dc.citation.volume13-
dc.citation.issue6-
dc.citation.publicationnameENERGIES-
dc.identifier.doi10.3390/en13061316-
dc.contributor.nonIdAuthorRehan, Muhammad-
dc.contributor.nonIdAuthorCho, Yunae-
dc.contributor.nonIdAuthorCho, Ara-
dc.contributor.nonIdAuthorKim, Kihwan-
dc.contributor.nonIdAuthorCho, Jun-Sik-
dc.contributor.nonIdAuthorYun, Jae Ho-
dc.contributor.nonIdAuthorAhn, Seungkyu-
dc.contributor.nonIdAuthorGwak, Jihye-
dc.contributor.nonIdAuthorShin, Donghyeop-
dc.description.isOpenAccessY-
dc.type.journalArticleArticle; Proceedings Paper-
dc.subject.keywordAuthorearth-abundant-
dc.subject.keywordAuthorkesterite structure-
dc.subject.keywordAuthorCZTSe-
dc.subject.keywordAuthorgrowth temperature-
dc.subject.keywordPlusKESTERITE-
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