DC Field | Value | Language |
---|---|---|
dc.contributor.author | Rehan, Muhammad | ko |
dc.contributor.author | Jeon, Hyeonmin | ko |
dc.contributor.author | Cho, Yunae | ko |
dc.contributor.author | Cho, Ara | ko |
dc.contributor.author | Kim, Kihwan | ko |
dc.contributor.author | Cho, Jun-Sik | ko |
dc.contributor.author | Yun, Jae Ho | ko |
dc.contributor.author | Ahn, Seungkyu | ko |
dc.contributor.author | Gwak, Jihye | ko |
dc.contributor.author | Shin, Donghyeop | ko |
dc.date.accessioned | 2020-05-20T09:20:13Z | - |
dc.date.available | 2020-05-20T09:20:13Z | - |
dc.date.created | 2020-05-18 | - |
dc.date.created | 2020-05-18 | - |
dc.date.issued | 2020-03 | - |
dc.identifier.citation | ENERGIES, v.13, no.6 | - |
dc.identifier.issn | 1996-1073 | - |
dc.identifier.uri | http://hdl.handle.net/10203/274247 | - |
dc.description.abstract | Kesterite-structured Cu2ZnSnSe4 (CZTSe) is considered as one of the Earth-abundant and non-toxic photovoltaic materials. CZTSe films have been prepared using a single-step co-evaporation method at a relatively low temperature (i.e., below 500 degrees C). Due to the volatile nature of tin-selenide, the control over substrate temperature (i.e., growth temperature) is very important in terms of the deposition of high-quality CZTSe films. In this regard, the effects of growth temperatures on the CZTSe film morphology were investigated. The suitable temperature range to deposit CZTSe films with Cu-poor and Zn-rich compositions was 380-480 degrees C. As the temperature increased, the surface roughness of the CZTSe film decreased, which could improve p/n junction properties and associated device performances. Particularly, according to capacitance-voltage (C-V) and derived-level capacitance profiling (DLCP) measurements, the density of interfacial defects of CZTSe film grown at 480 degrees C showed the lowest value, of the order of similar to 3 x 10(15) cm(-3). Regardless of applied growth temperatures, the formation of a MoSe2 layer was rarely observed, since the growth temperature was not high enough to have a reaction between Mo back contact layers and CZTSe absorber layers. As a result, the photovoltaic (PV) device with CZTSe film grown at 480 degrees C yielded the best power conversion efficiency of 6.47%. It is evident that the control over film growth temperature is a critical factor for obtaining high-quality CZTSe film prepared by one-step process. | - |
dc.language | English | - |
dc.publisher | MDPI | - |
dc.title | Fabrication and Characterization of Cu2ZnSnSe4 Thin-Film Solar Cells using a Single-Stage Co-Evaporation Method: Effects of Film Growth Temperatures on Device Performances | - |
dc.type | Article | - |
dc.identifier.wosid | 000528727500021 | - |
dc.identifier.scopusid | 2-s2.0-85081980829 | - |
dc.type.rims | ART | - |
dc.citation.volume | 13 | - |
dc.citation.issue | 6 | - |
dc.citation.publicationname | ENERGIES | - |
dc.identifier.doi | 10.3390/en13061316 | - |
dc.contributor.nonIdAuthor | Rehan, Muhammad | - |
dc.contributor.nonIdAuthor | Cho, Yunae | - |
dc.contributor.nonIdAuthor | Cho, Ara | - |
dc.contributor.nonIdAuthor | Kim, Kihwan | - |
dc.contributor.nonIdAuthor | Cho, Jun-Sik | - |
dc.contributor.nonIdAuthor | Yun, Jae Ho | - |
dc.contributor.nonIdAuthor | Ahn, Seungkyu | - |
dc.contributor.nonIdAuthor | Gwak, Jihye | - |
dc.contributor.nonIdAuthor | Shin, Donghyeop | - |
dc.description.isOpenAccess | Y | - |
dc.type.journalArticle | Article; Proceedings Paper | - |
dc.subject.keywordAuthor | earth-abundant | - |
dc.subject.keywordAuthor | kesterite structure | - |
dc.subject.keywordAuthor | CZTSe | - |
dc.subject.keywordAuthor | growth temperature | - |
dc.subject.keywordPlus | KESTERITE | - |
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