DC Field | Value | Language |
---|---|---|
dc.contributor.author | Johar, Muhammad Ali | ko |
dc.contributor.author | Kim, Taeyun | ko |
dc.contributor.author | Song, Hyun-Gyu | ko |
dc.contributor.author | Waseem, Aadil | ko |
dc.contributor.author | Kang, Jin-Ho | ko |
dc.contributor.author | Hassan, Mostafa Afifi | ko |
dc.contributor.author | Bagal, Indrajit V. | ko |
dc.contributor.author | Cho, Yong-Hoon | ko |
dc.contributor.author | Ryu, Sang-Wan | ko |
dc.date.accessioned | 2020-05-19T05:20:05Z | - |
dc.date.available | 2020-05-19T05:20:05Z | - |
dc.date.created | 2020-05-18 | - |
dc.date.created | 2020-05-18 | - |
dc.date.created | 2020-05-18 | - |
dc.date.created | 2020-05-18 | - |
dc.date.created | 2020-05-18 | - |
dc.date.created | 2020-05-18 | - |
dc.date.created | 2020-05-18 | - |
dc.date.created | 2020-05-18 | - |
dc.date.issued | 2020-04 | - |
dc.identifier.citation | NANOSCALE ADVANCES, v.2, no.4, pp.1654 - 1665 | - |
dc.identifier.issn | 2516-0230 | - |
dc.identifier.uri | http://hdl.handle.net/10203/274239 | - |
dc.description.abstract | We have demonstrated for the first time the hybrid development of next-generation 3-D hierarchical GaN/InGaN multiple-quantum-well nanowires on a patterned Si nanowire-template. The patterned Si nanowire-template is fabricated using metal-assisted chemical-etching, and the conformal growth of the GaN/InGaN multiple-quantum-well (MQW) coaxial nanowires is conducted using metal-organic-chemical-vapor-deposition by the two-step growth approach of vapor-liquid-solid for the GaN core and vapor-solid for the GaN/InGaN MQW shells. The growth directions of the GaN nanowires are confirmed by transmission electron microscopy and selected area electron diffraction patterns. The emission of the GaN/InGaN MQW nanowire is tuned from 440 nm to 505 nm by increasing the InGaN quantum-well thickness. The carrier dynamics were evaluated by performing temperature-dependent time-resolved photoluminescence measurement, and the radiative lifetime of photogenerated electron-hole pairs was found to range from 30 to 35 ps. A very high IQE of 56% was measured due to the suppressed quantum-confined Stark effect which was enabled by the semi-polar growth facet of the GaN/InGaN MQWs. The demonstration of the growth of the hybrid 3-D hierarchical GaN/InGaN MQW nanowires provides a seamless platform for a broad range of multifunctional optical and electronic applications. | - |
dc.language | English | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.title | Three-dimensional hierarchical semi-polar GaN/InGaN MQW coaxial nanowires on a patterned Si nanowire template | - |
dc.type | Article | - |
dc.identifier.wosid | 000528673500026 | - |
dc.identifier.scopusid | 2-s2.0-85083627995 | - |
dc.type.rims | ART | - |
dc.citation.volume | 2 | - |
dc.citation.issue | 4 | - |
dc.citation.beginningpage | 1654 | - |
dc.citation.endingpage | 1665 | - |
dc.citation.publicationname | NANOSCALE ADVANCES | - |
dc.identifier.doi | 10.1039/d0na00115e | - |
dc.contributor.localauthor | Cho, Yong-Hoon | - |
dc.contributor.nonIdAuthor | Johar, Muhammad Ali | - |
dc.contributor.nonIdAuthor | Kim, Taeyun | - |
dc.contributor.nonIdAuthor | Waseem, Aadil | - |
dc.contributor.nonIdAuthor | Kang, Jin-Ho | - |
dc.contributor.nonIdAuthor | Hassan, Mostafa Afifi | - |
dc.contributor.nonIdAuthor | Bagal, Indrajit V. | - |
dc.contributor.nonIdAuthor | Ryu, Sang-Wan | - |
dc.description.isOpenAccess | Y | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | FACILE GROWTH | - |
dc.subject.keywordPlus | DENSITY | - |
dc.subject.keywordPlus | ARRAYS | - |
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