Curing of Aged Gate Dielectric by the Self-Heating Effect in MOSFETs

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Gate dielectric damage caused by both internal and external stresses is becoming worse because of aggressive complementary metal-oxide-semiconductor (CMOS) scaling. However, conventional technologies for damage reduction using thermal annealing during fabrication have some limitations. As a result, there is a growing demand for technologies that will cure CMOS damage as a new paradigm for improving long-term reliability. This review paper reexamines self-recovery technologies, which are fully compatible with CMOS fabrication. Although self-heating has long been considered an unwanted operating side effect, it can also be favorably utilized to cure damage. Generated Joule heat arising from device operation can uniformly anneal the gate dielectric and effectively recover damage in various devices, such as conventional logic, memory, and aerospace CMOS devices, as well as thin-film transistors for displays.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2020-03
Language
English
Article Type
Article
Citation

IEEE TRANSACTIONS ON ELECTRON DEVICES, v.67, no.3, pp.777 - 788

ISSN
0018-9383
DOI
10.1109/TED.2020.2964846
URI
http://hdl.handle.net/10203/273933
Appears in Collection
EE-Journal Papers(저널논문)
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