DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ko, HS | ko |
dc.contributor.author | Chung, IS | ko |
dc.contributor.author | Paik, Kyung-Wook | ko |
dc.date.accessioned | 2008-01-11T09:06:09Z | - |
dc.date.available | 2008-01-11T09:06:09Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2001-06 | - |
dc.identifier.citation | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY , v.83, no.1-3, pp.111 - 118 | - |
dc.identifier.issn | 0921-5107 | - |
dc.identifier.uri | http://hdl.handle.net/10203/2729 | - |
dc.description.abstract | Al-chelate coupling agent was successfully applied to improve the adhesion strength of a thermoplastic polyetherimide resin, Ultem 1000 (R) to a silicon wafer during the fabrication of multichip module (MCM) substrates, The origin of the enhanced adhesion strength achieved by applying Al chelate was also investigated using a surface characterization experiment and a theoretical approach. The peel strength of as-laminated Ultem film on an untreated Si wafer was the same as that on a coupler-treated one right after lamination. However, the Ultem layer laminated on an untreated Si wafer lost its adhesion strength to zero within 24 h of 85 degrees /85% relative humidity (RH) aging. In contrast, the Ultem film laminated on the coupler-treated Si wafer maintained its adhesion strength even after 30 days of 85 degreesC/85% RH treatment. Atomic force microscopy (AFM), surface energy calculation using contact angle measurement, and high-resolution X-ray photoelectron spectroscopy (XPS) analysis were conducted to characterize the surface conditions of a bare Si wafer and a coupler-treated Si wafer. It was revealed by the AFM experiment that the surface roughening caused by Al-chelate treatment was negligible, meaning that the enhanced adhesion stability during 85 degreesC/85% RH aging is mainly attributed to the surface characteristic change of Si substrate. Based on the results of XPS analysis and contact angle measurement, a model of surface bonding structure of an Al-chelate treated Si wafer was suggested and compared with that of a bare Si wafer. Finally, peel strength variation of Si wafers with and without the coupling agent as a function of 85 degreesC/85% RH aging times can be explained by the zero point of charge consideration. Stable lamination based MCMs and micro-via build-up processes can also be obtained using these results. (C) 2001 Elsevier Science B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en_US | en |
dc.publisher | Elsevier BV | - |
dc.subject | POLYIMIDE ADHESION | - |
dc.subject | SURFACE | - |
dc.subject | SILICA | - |
dc.subject | COATINGS | - |
dc.subject | XPS | - |
dc.title | A study on the adhesion enhancement of polyetherimide to Si wafer using an Al-chelate treatment during multichip module fabrication | - |
dc.type | Article | - |
dc.identifier.wosid | 000169321500020 | - |
dc.identifier.scopusid | 2-s2.0-0035927990 | - |
dc.type.rims | ART | - |
dc.citation.volume | 83 | - |
dc.citation.issue | 1-3 | - |
dc.citation.beginningpage | 111 | - |
dc.citation.endingpage | 118 | - |
dc.citation.publicationname | MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Paik, Kyung-Wook | - |
dc.contributor.nonIdAuthor | Ko, HS | - |
dc.contributor.nonIdAuthor | Chung, IS | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | adhesion promoter | - |
dc.subject.keywordAuthor | Al chelate | - |
dc.subject.keywordAuthor | Ultem | - |
dc.subject.keywordAuthor | polyetherimide | - |
dc.subject.keywordAuthor | zero point of charge | - |
dc.subject.keywordAuthor | multichip module | - |
dc.subject.keywordPlus | POLYIMIDE ADHESION | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordPlus | SILICA | - |
dc.subject.keywordPlus | COATINGS | - |
dc.subject.keywordPlus | XPS | - |
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