DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Bokyeom | ko |
dc.contributor.author | Seo, Junbeom | ko |
dc.contributor.author | Shin, Mincheol | ko |
dc.date.accessioned | 2020-03-19T01:24:54Z | - |
dc.date.available | 2020-03-19T01:24:54Z | - |
dc.date.created | 2020-03-12 | - |
dc.date.created | 2020-03-12 | - |
dc.date.created | 2020-03-12 | - |
dc.date.issued | 2020-02 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.67, no.2, pp.463 - 468 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | http://hdl.handle.net/10203/272379 | - |
dc.description.abstract | In this article, a first-principles based simulation framework is presented to project the performance of a novel 2-D field-effect transistor (FET) under the ballistic limit. Our framework consists of: 1) density functional theory modeling of the novel 2-D material that gives accurate electronic structure without requiring parameters; 2) mode-space transformation; 3) spectral adjustment to maximize computational efficiency; 4) extraction of the dielectric constant of the novel 2-D material using a first-principles approach; and 5) nonorthogonal nonequilibrium Green's function method for accurate quantum transport simulations. We have applied our framework to evaluate the device performance of novel silicene/gallium phosphide (Si/GaP) heterobilayer FETs. Our results reveal that Si/GaP FETs have a great potential for high-performance logic devices, with high ON-state current, low subthreshold swing, and high speed with small dynamic power consumption. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Assessing the Performance of Novel Two-Dimensional Materials Transistors: First-Principles Based Approach | - |
dc.type | Article | - |
dc.identifier.wosid | 000510723400008 | - |
dc.identifier.scopusid | 2-s2.0-85078874457 | - |
dc.type.rims | ART | - |
dc.citation.volume | 67 | - |
dc.citation.issue | 2 | - |
dc.citation.beginningpage | 463 | - |
dc.citation.endingpage | 468 | - |
dc.citation.publicationname | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.identifier.doi | 10.1109/TED.2019.2961396 | - |
dc.contributor.localauthor | Shin, Mincheol | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Density functional theory (DFT) | - |
dc.subject.keywordAuthor | device simulation | - |
dc.subject.keywordAuthor | field-effect transistor (FET) | - |
dc.subject.keywordAuthor | nonequilibrium Green&apos | - |
dc.subject.keywordAuthor | s function (NEGF) | - |
dc.subject.keywordAuthor | quantum transport | - |
dc.subject.keywordAuthor | silicene | - |
dc.subject.keywordAuthor | gallium phosphide (Si | - |
dc.subject.keywordAuthor | GaP) | - |
dc.subject.keywordAuthor | silicon | - |
dc.subject.keywordPlus | SILICENE | - |
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