Assessing the Performance of Novel Two-Dimensional Materials Transistors: First-Principles Based Approach

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 50
  • Download : 0
DC FieldValueLanguage
dc.contributor.authorKim, Bokyeomko
dc.contributor.authorSeo, Junbeomko
dc.contributor.authorShin, Mincheolko
dc.date.accessioned2020-03-19T01:24:54Z-
dc.date.available2020-03-19T01:24:54Z-
dc.date.created2020-03-12-
dc.date.issued2020-02-
dc.identifier.citationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.67, no.2, pp.463 - 468-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10203/272379-
dc.description.abstractIn this article, a first-principles based simulation framework is presented to project the performance of a novel 2-D field-effect transistor (FET) under the ballistic limit. Our framework consists of: 1) density functional theory modeling of the novel 2-D material that gives accurate electronic structure without requiring parameters; 2) mode-space transformation; 3) spectral adjustment to maximize computational efficiency; 4) extraction of the dielectric constant of the novel 2-D material using a first-principles approach; and 5) nonorthogonal nonequilibrium Green's function method for accurate quantum transport simulations. We have applied our framework to evaluate the device performance of novel silicene/gallium phosphide (Si/GaP) heterobilayer FETs. Our results reveal that Si/GaP FETs have a great potential for high-performance logic devices, with high ON-state current, low subthreshold swing, and high speed with small dynamic power consumption.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleAssessing the Performance of Novel Two-Dimensional Materials Transistors: First-Principles Based Approach-
dc.typeArticle-
dc.identifier.wosid000510723400008-
dc.identifier.scopusid2-s2.0-85078874457-
dc.type.rimsART-
dc.citation.volume67-
dc.citation.issue2-
dc.citation.beginningpage463-
dc.citation.endingpage468-
dc.citation.publicationnameIEEE TRANSACTIONS ON ELECTRON DEVICES-
dc.identifier.doi10.1109/TED.2019.2961396-
dc.contributor.localauthorShin, Mincheol-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorDensity functional theory (DFT)-
dc.subject.keywordAuthordevice simulation-
dc.subject.keywordAuthorfield-effect transistor (FET)-
dc.subject.keywordAuthornonequilibrium Green&apos-
dc.subject.keywordAuthors function (NEGF)-
dc.subject.keywordAuthorquantum transport-
dc.subject.keywordAuthorsilicene-
dc.subject.keywordAuthorgallium phosphide (Si-
dc.subject.keywordAuthorGaP)-
dc.subject.keywordAuthorsilicon-
dc.subject.keywordPlusSILICENE-
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0