DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Geon-Beom | ko |
dc.contributor.author | Kim, Choong-Ki | ko |
dc.contributor.author | Bang, Tewook | ko |
dc.contributor.author | Yoo, Min-Soo | ko |
dc.contributor.author | Park, Jun-Young | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.date.accessioned | 2020-02-12T03:20:07Z | - |
dc.date.available | 2020-02-12T03:20:07Z | - |
dc.date.created | 2019-11-28 | - |
dc.date.created | 2019-11-28 | - |
dc.date.created | 2019-11-28 | - |
dc.date.created | 2019-11-28 | - |
dc.date.issued | 2020-01 | - |
dc.identifier.citation | MICROELECTRONICS RELIABILITY, v.104 | - |
dc.identifier.issn | 0026-2714 | - |
dc.identifier.uri | http://hdl.handle.net/10203/272294 | - |
dc.description.abstract | This study demonstrates a method for curing the gate dielectric of a MOSFET using Joule heat (JH) generated by forward bias current in the PN-junction in the drain-to-body (D-B) and source-to-body (S[sbnd]B). To accurately quantify the curing effect by the D-B JH and the S[sbnd]B JH, the interface trap density (Nit) of the gate dielectric was laterally profiled using a charge pumping characterization method. The curing method was applied to repair damage in the gate dielectric caused by Fowler-Nordheim (F[sbnd]N) and hot-carrier injection (HCI) stress. When F[sbnd]N stress was applied to the device, there is no difference in curing the damage by the D-B JH and the S[sbnd]B JH. However, when HCI stress, which asymmetrically causes more damage to the drain, was applied, the D-B JH showed better recovery than the S[sbnd]B JH. | - |
dc.language | English | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.title | Analysis of Damage Curing in a MOSFET with Joule Heat Generated by Forward Junction Current at the Source and Drain | - |
dc.type | Article | - |
dc.identifier.wosid | 000513074600014 | - |
dc.identifier.scopusid | 2-s2.0-85076255571 | - |
dc.type.rims | ART | - |
dc.citation.volume | 104 | - |
dc.citation.publicationname | MICROELECTRONICS RELIABILITY | - |
dc.identifier.doi | 10.1016/j.microrel.2019.113548 | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.nonIdAuthor | Kim, Choong-Ki | - |
dc.contributor.nonIdAuthor | Bang, Tewook | - |
dc.contributor.nonIdAuthor | Yoo, Min-Soo | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Charge pumping (CP) | - |
dc.subject.keywordAuthor | Forward junction current | - |
dc.subject.keywordAuthor | Fowler-Nordheim (F-N) | - |
dc.subject.keywordAuthor | Gate dielectric curing | - |
dc.subject.keywordAuthor | Hot-carrier injection (HCI) | - |
dc.subject.keywordAuthor | Interface trap | - |
dc.subject.keywordAuthor | Joule heat | - |
dc.subject.keywordAuthor | Lateral profiling | - |
dc.subject.keywordAuthor | Performance parameter | - |
dc.subject.keywordAuthor | PN-junction | - |
dc.subject.keywordAuthor | Recovery | - |
dc.subject.keywordPlus | FOWLER-NORDHEIM | - |
dc.subject.keywordPlus | DEGRADATION | - |
dc.subject.keywordPlus | INTERFACE | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | STRESS | - |
dc.subject.keywordPlus | MODEL | - |
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