DC Field | Value | Language |
---|---|---|
dc.contributor.author | Das, Dipjyoti | ko |
dc.contributor.author | Gaddam, Venkateswarlu | ko |
dc.contributor.author | Jeon, Sanghun | ko |
dc.date.accessioned | 2020-02-05T08:20:14Z | - |
dc.date.available | 2020-02-05T08:20:14Z | - |
dc.date.created | 2020-02-04 | - |
dc.date.created | 2020-02-04 | - |
dc.date.issued | 2020-01 | - |
dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.41, no.1, pp.34 - 37 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10203/272118 | - |
dc.description.abstract | In this letter, we report excellent ferroelectricity with high remanent polarization (P-r) in Zr rich hafnium zirconium oxide (HZO) films using high pressure postmetallization annealing (HPPMA). HZO films annealed using rapid thermal annealing (RTA) show highest ferroelectricity when the Hf:Zr ratio is 1:1 and exhibit antiferroelectricproperty for Zr rich films. However, under HPPMA, Zr rich films demonstrate enhanced ferroelectric property as compared to 1:1 HZO films and the best result was observed for 1:3 HZO films. The HZO (1:3) films by HPPMA show P-r as high as similar to 29 mu C/cm(2), which is almost 50% higher than that achieved for the best condition of RTA (P-r similar to 19 mu C/cm(2)). Besides, due to the presence of high Zr, the HZO (1: 3) films by HPPMA exhibit considerably higher dielectric constant (k similar to 43) and low coercive field (E-c similar to 1.21 MV/cm) as compared to that of HZO (1:1) films by RTA (k similar to 37, E-c similar to 1.35 MV/cm). We believe the enhanced ferroelectricity in Zr rich HZO films can be due to more o/t-phase formation in ZrO2 under HPPMA as compared to that of RTA. On the other hand, more m-phase formation was observed in HfO2 under HPPMA, resulting in a significant drop of Pr in case of Hf rich HZO. The demonstration of enhanced ferroelectric properties by Zr rich HZO films can be helpful for high functional semiconductor device applications. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Demonstration of High Ferroelectricity (P-r similar to 29 mu C/cm(2)) in Zr Rich HfxZr1-xO2 Films | - |
dc.type | Article | - |
dc.identifier.wosid | 000507305400009 | - |
dc.identifier.scopusid | 2-s2.0-85075646024 | - |
dc.type.rims | ART | - |
dc.citation.volume | 41 | - |
dc.citation.issue | 1 | - |
dc.citation.beginningpage | 34 | - |
dc.citation.endingpage | 37 | - |
dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
dc.identifier.doi | 10.1109/LED.2019.2955198 | - |
dc.contributor.localauthor | Jeon, Sanghun | - |
dc.contributor.nonIdAuthor | Das, Dipjyoti | - |
dc.contributor.nonIdAuthor | Gaddam, Venkateswarlu | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Ferroelectric films | - |
dc.subject.keywordAuthor | remanent polarization (P-r) | - |
dc.subject.keywordAuthor | coercive field (E-c) | - |
dc.subject.keywordAuthor | HPPMA | - |
dc.subject.keywordAuthor | RTA | - |
dc.subject.keywordAuthor | hafnium zirconium oxide (HZO) | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | LAYER | - |
dc.subject.keywordPlus | SUPPRESSION | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | BEHAVIOR | - |
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