DC Field | Value | Language |
---|---|---|
dc.contributor.author | Han, Joon-Kyu | ko |
dc.contributor.author | Hur, Jae | ko |
dc.contributor.author | Kim, Wu-Kang | ko |
dc.contributor.author | Park, Jun-Young | ko |
dc.contributor.author | Lee, Seung-Wook | ko |
dc.contributor.author | Kim, Seong-Yeon | ko |
dc.contributor.author | Yu, Ji-Man | ko |
dc.contributor.author | Choi, Yang-Kyu | ko |
dc.date.accessioned | 2020-01-21T06:20:17Z | - |
dc.date.available | 2020-01-21T06:20:17Z | - |
dc.date.created | 2020-01-21 | - |
dc.date.created | 2020-01-21 | - |
dc.date.created | 2020-01-21 | - |
dc.date.issued | 2020-01 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.19, pp.52 - 55 | - |
dc.identifier.issn | 1536-125X | - |
dc.identifier.uri | http://hdl.handle.net/10203/271661 | - |
dc.description.abstract | The effects of high temperature on an asymmetrically doped vertical pillar-type metal-oxide-semiconductor field-effect transistor (MOSFET) were investigated. An asymmetrically doped source and drain (SD) can be easily formed in a vertical pillar-type FET due to the unique pillar structure. When high temperature is applied to the asymmetric SD of a vertical pillar-typed silicon nanowire, it affects mobility and carrier injection differently. It decreases mobility by phonon scattering for heavily doped S and intermediately doped D. In contrast, it enhances carrier injection for intermediately doped S and heavily doped D. Thus the ON-state current (I-ON) shows opposite dependencies at high temperature. This tendency was verified by electrical measurements and supporting simulations. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | A Study of High-Temperature Effects on an Asymmetrically Doped Vertical Pillar-Type Field-Effect Transistor | - |
dc.type | Article | - |
dc.identifier.wosid | 000505549800002 | - |
dc.identifier.scopusid | 2-s2.0-85076732435 | - |
dc.type.rims | ART | - |
dc.citation.volume | 19 | - |
dc.citation.beginningpage | 52 | - |
dc.citation.endingpage | 55 | - |
dc.citation.publicationname | IEEE TRANSACTIONS ON NANOTECHNOLOGY | - |
dc.identifier.doi | 10.1109/TNANO.2019.2958099 | - |
dc.contributor.localauthor | Choi, Yang-Kyu | - |
dc.contributor.nonIdAuthor | Kim, Wu-Kang | - |
dc.contributor.nonIdAuthor | Lee, Seung-Wook | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Vertical pillar-type FET | - |
dc.subject.keywordAuthor | Schottky tunneling current | - |
dc.subject.keywordAuthor | phonon scattering | - |
dc.subject.keywordAuthor | high temperature | - |
dc.subject.keywordAuthor | asymmetric doping | - |
dc.subject.keywordAuthor | forward mode (FM) | - |
dc.subject.keywordAuthor | reverse mode (RM) | - |
dc.subject.keywordAuthor | thermionic emission | - |
dc.subject.keywordPlus | SCHOTTKY-BARRIER | - |
dc.subject.keywordPlus | NANOWIRE | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | MOSFETS | - |
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