Characteristics of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with wide head T-shaped gate fabricated by optimized dose split E-beam lithography

Abstract

We report the AlGaAs/InCaAs pseudomorphic HEMT with a wide head T-shaped gate fabricated by optimization of dose split electron beam lithography and selective gate recess etching. The device performances were measured for the fully passivated 0.15 mu m gate length HEMT. The maximum extrinsic transconductance was 540 mS/mm. The minimum noise figure measured at 12 GHz under the V-ds = 2 V and I-ds = 22 mA was 0.34 dB with associated gain of 10.22 dB. At 18 GHz, the minimum noise figure was 0.49 dB.