Effects of implanted materials on impurity-induced layer disordering in strained Ga0.8In0.2As/GaxIn1-xAsyP1-y/Ga0.51In0.49P/GaAs quantum well structure

Abstract

The impurity-induced layer disordering in B- or Si-implanted Ga0.8In0.2As/GaalphaIn1-xAsyP1-y/Ga0.51In0.49P/GaAs quantum well structure has been studied. The wavelength shift of the photoluminescence peak and the degree of intermixing can be determined by the type and energy of implanted ions with followed annealing at the temperature of 900 degrees C. A photoluminesceuce peak shift of 70 meV was obtained by 120 keV Si-implantation and annealing at 900 degrees C. The diffused interface was also studied by cross sectional transmission electron microscopy.