Kink and beam steering free 0.98 mu m high-power RWG lasers with partially ion implanted channels

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A high-power RWG pump laser free of kink and beam steering is proposed and demonstrated. It utilises the ion implanted region formed in channel as a lateral mode selective absorber for the purpose of suppressing the higher-order mode excitation. The fabricated 0.98 mu m pump lasers exhibit high-power operation up to 250mW without any kink and beam steering.
Publisher
IEE-INST ELEC ENG
Issue Date
1998-03
Language
English
Article Type
Article
Citation

ELECTRONICS LETTERS, v.34, no.6, pp.562 - 563

ISSN
0013-5194
DOI
10.1049/el:19980412
URI
http://hdl.handle.net/10203/270991
Appears in Collection
EE-Journal Papers(저널논문)
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