A new extraction method to determine bias dependent source series resistance in GaAs FET's

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dc.contributor.authorKim, CHko
dc.contributor.authorYoon, KSko
dc.contributor.authorYang, JWko
dc.contributor.authorLee, JHko
dc.contributor.authorPark, Chul Soonko
dc.contributor.authorLee, JJko
dc.contributor.authorPyun, KEko
dc.date.accessioned2020-01-09T02:20:07Z-
dc.date.available2020-01-09T02:20:07Z-
dc.date.created2020-01-06-
dc.date.issued1998-09-
dc.identifier.citationIEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.46, no.9, pp.1242 - 1250-
dc.identifier.issn0018-9480-
dc.identifier.urihttp://hdl.handle.net/10203/270990-
dc.description.abstractA new method is proposed to determine bias-dependent source resistances for GaAs field-effect transistors (FET's), This method, which is a cold-FET measurement technique, utilizes the relations between the real part of the two-port impedances transformed from the measured S-parameters and their algebraic derivatives. It is based on the fact that the algebraic derivatives of the two-port resistances result in the simple form at the normal cold-FET condition. A bias-independent gate resistance is extracted at the pinched-off cold-FET condition to fulfill necessary and sufficient conditions in extraction. The proposed method is a direct measurement because only algebraic calculation is required, and it is general enough to need only one assumption of the laterally symmetric channel-doping profile. The deleterious results of dispersion (frequency dependence) and negative value in source resistances at the pinched-off cold-FET condition are explained by the effects of the leakage current and the on-wafer pad parasitics, respectively. The problem of deviation of alpha(21) and alpha(12) from 0.5 at the normal cold-FET condition is also resolved by deembedding the on-wafer pad parasitics. This method allows one to extract bias-dependent source resistances for GaAs FET's.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.titleA new extraction method to determine bias dependent source series resistance in GaAs FET's-
dc.typeArticle-
dc.identifier.wosid000075610900007-
dc.identifier.scopusid2-s2.0-0032166770-
dc.type.rimsART-
dc.citation.volume46-
dc.citation.issue9-
dc.citation.beginningpage1242-
dc.citation.endingpage1250-
dc.citation.publicationnameIEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES-
dc.identifier.doi10.1109/22.709464-
dc.contributor.localauthorPark, Chul Soon-
dc.contributor.nonIdAuthorKim, CH-
dc.contributor.nonIdAuthorYoon, KS-
dc.contributor.nonIdAuthorYang, JW-
dc.contributor.nonIdAuthorLee, JH-
dc.contributor.nonIdAuthorLee, JJ-
dc.contributor.nonIdAuthorPyun, KE-
dc.description.isOpenAccessN-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorbias dependence-
dc.subject.keywordAuthorcold FET-
dc.subject.keywordAuthorsource resistance-
dc.subject.keywordPlusGATE-VOLTAGE DEPENDENCE-
dc.subject.keywordPlusEQUIVALENT-CIRCUIT-
dc.subject.keywordPlusDRAIN-
dc.subject.keywordPlusMESFETS-
dc.subject.keywordPlusLENGTH-
dc.subject.keywordPlusPARAMETERS-
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