DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, CH | ko |
dc.contributor.author | Yoon, KS | ko |
dc.contributor.author | Yang, JW | ko |
dc.contributor.author | Lee, JH | ko |
dc.contributor.author | Park, Chul Soon | ko |
dc.contributor.author | Lee, JJ | ko |
dc.contributor.author | Pyun, KE | ko |
dc.date.accessioned | 2020-01-09T02:20:07Z | - |
dc.date.available | 2020-01-09T02:20:07Z | - |
dc.date.created | 2020-01-06 | - |
dc.date.issued | 1998-09 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.46, no.9, pp.1242 - 1250 | - |
dc.identifier.issn | 0018-9480 | - |
dc.identifier.uri | http://hdl.handle.net/10203/270990 | - |
dc.description.abstract | A new method is proposed to determine bias-dependent source resistances for GaAs field-effect transistors (FET's), This method, which is a cold-FET measurement technique, utilizes the relations between the real part of the two-port impedances transformed from the measured S-parameters and their algebraic derivatives. It is based on the fact that the algebraic derivatives of the two-port resistances result in the simple form at the normal cold-FET condition. A bias-independent gate resistance is extracted at the pinched-off cold-FET condition to fulfill necessary and sufficient conditions in extraction. The proposed method is a direct measurement because only algebraic calculation is required, and it is general enough to need only one assumption of the laterally symmetric channel-doping profile. The deleterious results of dispersion (frequency dependence) and negative value in source resistances at the pinched-off cold-FET condition are explained by the effects of the leakage current and the on-wafer pad parasitics, respectively. The problem of deviation of alpha(21) and alpha(12) from 0.5 at the normal cold-FET condition is also resolved by deembedding the on-wafer pad parasitics. This method allows one to extract bias-dependent source resistances for GaAs FET's. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | A new extraction method to determine bias dependent source series resistance in GaAs FET's | - |
dc.type | Article | - |
dc.identifier.wosid | 000075610900007 | - |
dc.identifier.scopusid | 2-s2.0-0032166770 | - |
dc.type.rims | ART | - |
dc.citation.volume | 46 | - |
dc.citation.issue | 9 | - |
dc.citation.beginningpage | 1242 | - |
dc.citation.endingpage | 1250 | - |
dc.citation.publicationname | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | - |
dc.identifier.doi | 10.1109/22.709464 | - |
dc.contributor.localauthor | Park, Chul Soon | - |
dc.contributor.nonIdAuthor | Kim, CH | - |
dc.contributor.nonIdAuthor | Yoon, KS | - |
dc.contributor.nonIdAuthor | Yang, JW | - |
dc.contributor.nonIdAuthor | Lee, JH | - |
dc.contributor.nonIdAuthor | Lee, JJ | - |
dc.contributor.nonIdAuthor | Pyun, KE | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | bias dependence | - |
dc.subject.keywordAuthor | cold FET | - |
dc.subject.keywordAuthor | source resistance | - |
dc.subject.keywordPlus | GATE-VOLTAGE DEPENDENCE | - |
dc.subject.keywordPlus | EQUIVALENT-CIRCUIT | - |
dc.subject.keywordPlus | DRAIN | - |
dc.subject.keywordPlus | MESFETS | - |
dc.subject.keywordPlus | LENGTH | - |
dc.subject.keywordPlus | PARAMETERS | - |
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