Curing of Hot-Carrier Induced Damage by Gate-Induced Drain Leakage Current in Gate-All-Around FETs

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Gate oxide aging in a gate-all-around (GAA) FET fabricated on a bulk substrate was successfully cured by gate-induced drain leakage (GIDL) current. High level of GIDL current flows during the off-state cures the gate oxide aging by hot-carrier injection (HCI). The recovery behaviors were analyzed by tracing changes in the device parameters. Especially, it was found that the curing was not associated with the electric field or created holes under the bias conditions for GIDL, but was associated with the elevated temperature. The GIDL recovery requires neither extra apparatus for Joule heating nor circuit modification. This work can be useful for various FETs which have high off-state current.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2019-12
Language
English
Article Type
Article
Citation

IEEE ELECTRON DEVICE LETTERS, v.40, no.12, pp.1909 - 1912

ISSN
0741-3106
DOI
10.1109/LED.2019.2946393
URI
http://hdl.handle.net/10203/270842
Appears in Collection
EE-Journal Papers(저널논문)
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