Theoretical Analysis and Experimental Optimization of Graphene/TMD Heterojunction Barristors

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dc.contributor.authorShim, Jaewooko
dc.contributor.authorKim, Yong-Hoonko
dc.contributor.authorPark, Jin-Hongko
dc.date.accessioned2019-12-18T01:20:07Z-
dc.date.available2019-12-18T01:20:07Z-
dc.date.created2019-12-15-
dc.date.created2019-12-15-
dc.date.issued2016-10-
dc.identifier.citationECS Transactions, v.75, no.13, pp.43 - 48-
dc.identifier.issn1938-5862-
dc.identifier.urihttp://hdl.handle.net/10203/269842-
dc.description.abstractWe optimized the graphene/MoS2 and graphene/WSe2 heterojunction barristors in terms of on-/off-current densities and on/off-current ratio by inserting an APTES layer which suppresses the charge puddle effect. The on-/off-current densities and on/off-current ratio were improved by a factor of 2.1/15 and 32 in the graphene/MoS2 barristor and 10/25 and 230 in the graphene/WSe2 barristor, respectively. Particularly, we reported an unusual phenomenon that on-state current density increases as the measurement temperature decreases in the graphene/WSe2 barristor. Finally, based on temperature-dependent current-voltage measurements coupled with first-principle density functional theory (DFT) calculations, we confirmed that the main operating mechanisms of graphene/MoS2 and graphene/WSe2 barristors were thermionic emission and trap-assisted tunneling processes, respectively.-
dc.languageEnglish-
dc.publisherThe Electrochemical Society-
dc.titleTheoretical Analysis and Experimental Optimization of Graphene/TMD Heterojunction Barristors-
dc.typeArticle-
dc.type.rimsART-
dc.citation.volume75-
dc.citation.issue13-
dc.citation.beginningpage43-
dc.citation.endingpage48-
dc.citation.publicationnameECS Transactions-
dc.identifier.doi10.1149/07513.0043ecst-
dc.contributor.localauthorKim, Yong-Hoon-
dc.contributor.nonIdAuthorShim, Jaewoo-
dc.contributor.nonIdAuthorPark, Jin-Hong-
dc.description.isOpenAccessN-
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