A 65nm CMOS current controlled oscillator with high tuning linearity for wideband polar modulation

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dc.contributor.authorTang, Yiwuko
dc.contributor.authorHu, Jianyunko
dc.contributor.authorPark, Jongminko
dc.contributor.authorChoi, Jaehyoukko
dc.contributor.authorLeung, Lincolnko
dc.contributor.authorNarathong, Chiewcharnko
dc.contributor.authorSahota, Kamalko
dc.date.accessioned2019-12-13T13:28:30Z-
dc.date.available2019-12-13T13:28:30Z-
dc.date.created2019-11-19-
dc.date.issued2012-10-01-
dc.identifier.citation34th Annual Custom Integrated Circuits Conference, CICC 2012-
dc.identifier.urihttp://hdl.handle.net/10203/269698-
dc.description.abstractA highly linear oscillator is presented for wideband polar modulation. It has both varactor voltage tuning for frequency locking and temperature compensation as well as inductive current tuning for linear phase modulation. Implemented in 65nm CMOS, it achieved a gain variation less than ±2% over more than 32MHz range meeting WCDMA polar modulation requirement. At 3.8GHz and 3MHz offset, its phase noise is -136.5dBc/Hz with current consumption of 18mA from 2.1V supply.-
dc.languageEnglish-
dc.publisherIEEE-
dc.titleA 65nm CMOS current controlled oscillator with high tuning linearity for wideband polar modulation-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationname34th Annual Custom Integrated Circuits Conference, CICC 2012-
dc.identifier.conferencecountryUS-
dc.identifier.conferencelocationSan Jose, CA-
dc.identifier.doi10.1109/CICC.2012.6330598-
dc.contributor.nonIdAuthorTang, Yiwu-
dc.contributor.nonIdAuthorHu, Jianyun-
dc.contributor.nonIdAuthorPark, Jongmin-
dc.contributor.nonIdAuthorLeung, Lincoln-
dc.contributor.nonIdAuthorNarathong, Chiewcharn-
dc.contributor.nonIdAuthorSahota, Kamal-
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