A PVT-robust -39dBc 1kHz-to-100MHz integrated-phase-noise 29GHz injection-locked frequency multiplier with a 600µW frequency-tracking loop using the averages of phase deviations for mm-band 5G transceivers

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dc.contributor.authorYoo, Seyeonko
dc.contributor.authorChoi, Seojinko
dc.contributor.authorKim, Juyeopko
dc.contributor.authorYoon, Heeinko
dc.contributor.authorLee, Yongsunko
dc.contributor.authorChoi, Jaehyoukko
dc.date.accessioned2019-12-13T13:26:05Z-
dc.date.available2019-12-13T13:26:05Z-
dc.date.created2019-11-19-
dc.date.issued2017-02-07-
dc.identifier.citation64th IEEE International Solid-State Circuits Conference, ISSCC 2017, pp.324 - 325-
dc.identifier.urihttp://hdl.handle.net/10203/269627-
dc.description.abstractTo meet requirements of high data-rates, RF transceivers for a 5G standard must have an ultra-wide bandwidth in a mm-wave band. A big challenge of a 5G transceiver is to generate ultra-low-PN (phase noise) local-oscillator (LO) signals to suppress integrated PN (IPN) over such an extremely wide bandwidth. A PLL that directly generates mm-band LO signals is not a good choice due to power-hungry frequency dividers and relatively poor PN. An mm-band LO generator, cascading a GHz-range PLL and a frequency multiplier as shown in Fig. 19.2.1, is an attractive solution. First, a GHz-range PLL can have a higher FOM than a mm-band PLL [1]. Second, the cascaded architecture is naturally able to support the bands for 2G to 4G standards. An injection-locked frequency multiplier (ILFM) is popular in a mm-band, achieving ultra-low PN even in a tight power budget. However, the vulnerability of PN to PVT variations is a critical problem. For an ILFM, the PN performance can be improved only when the free-running VCO frequency, f-
dc.languageEnglish-
dc.publisherInstitute of Electrical and Electronics Engineers Inc.-
dc.titleA PVT-robust -39dBc 1kHz-to-100MHz integrated-phase-noise 29GHz injection-locked frequency multiplier with a 600µW frequency-tracking loop using the averages of phase deviations for mm-band 5G transceivers-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.beginningpage324-
dc.citation.endingpage325-
dc.citation.publicationname64th IEEE International Solid-State Circuits Conference, ISSCC 2017-
dc.identifier.conferencecountryUS-
dc.identifier.conferencelocationSan Francisco Marriott Marquis Hotel-
dc.identifier.doi10.1109/ISSCC.2017.7870392-
dc.contributor.nonIdAuthorYoo, Seyeon-
dc.contributor.nonIdAuthorChoi, Seojin-
dc.contributor.nonIdAuthorKim, Juyeop-
dc.contributor.nonIdAuthorYoon, Heein-
dc.contributor.nonIdAuthorLee, Yongsun-
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