Atomistic origins of low-resistance metal contacts to phase-engineered MoS2
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Taehyeong | ko |
| dc.contributor.author | Kim, Yong-Hoon | ko |
| dc.date.accessioned | 2019-12-13T10:26:25Z | - |
| dc.date.available | 2019-12-13T10:26:25Z | - |
| dc.date.created | 2019-11-26 | - |
| dc.date.issued | 2019-07-26 | - |
| dc.identifier.citation | The 10th International Conference of the Asian Consortium on Computational Materials Science (ACCMS-10) | - |
| dc.identifier.uri | http://hdl.handle.net/10203/269339 | - |
| dc.language | English | - |
| dc.publisher | Department of Chemistry, City University of Hong Kong | - |
| dc.title | Atomistic origins of low-resistance metal contacts to phase-engineered MoS2 | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | The 10th International Conference of the Asian Consortium on Computational Materials Science (ACCMS-10) | - |
| dc.identifier.conferencecountry | HK | - |
| dc.identifier.conferencelocation | City University of Hong Kong | - |
| dc.contributor.localauthor | Kim, Yong-Hoon | - |
| dc.contributor.nonIdAuthor | Kim, Taehyeong | - |
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