Demonstration of Thermally-Assisted Programming with High Speed and Improved Reliability for Junctionless Nanowire NOR Flash Memory

Cited 1 time in webofscience Cited 0 time in scopus
  • Hit : 87
  • Download : 0
This study demonstrated the thermally-assisted (TA) programming of a NOR flash memory device, which was composed of a junctionless silicon nanowire with gate-all-around structure. Fast programming was achieved with the aid of Joule heat, which was generated in a homogeneously heavily doped SiNW by a voltage difference between the source and drain. Its programming speed is the fastest among various NOR flash memories ever reported. The mechanism for programming NOR flash memory inevitably degrades the quality of the tunneling oxide. But the proposed thermally-assisted programming provides simultaneous curing of the damaged tunneling oxide.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2019-10
Language
English
Article Type
Article
Citation

IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.18, pp.1110 - 1113

ISSN
1536-125X
DOI
10.1109/TNANO.2019.2945321
URI
http://hdl.handle.net/10203/268666
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
There are no files associated with this item.
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 1 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0