Atomistic Simulation of GaSb/InAs Ultra-thin-body Tunnel FETs
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Cho, Yucheol | ko |
| dc.contributor.author | Shin, Mincheol | ko |
| dc.date.accessioned | 2019-11-26T03:21:11Z | - |
| dc.date.available | 2019-11-26T03:21:11Z | - |
| dc.date.created | 2019-11-26 | - |
| dc.date.issued | 2019-07-04 | - |
| dc.identifier.citation | Nano Korea 2019 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/268588 | - |
| dc.language | English | - |
| dc.publisher | Nano Korea 2019 | - |
| dc.title | Atomistic Simulation of GaSb/InAs Ultra-thin-body Tunnel FETs | - |
| dc.type | Conference | - |
| dc.type.rims | CONF | - |
| dc.citation.publicationname | Nano Korea 2019 | - |
| dc.identifier.conferencecountry | KO | - |
| dc.identifier.conferencelocation | KINTEX Exhibition Center I | - |
| dc.contributor.localauthor | Shin, Mincheol | - |
| dc.contributor.nonIdAuthor | Cho, Yucheol | - |
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