A 40nm CMOS 12b 200MS/s Single-amplifier Dual-residue Pipelined-SAR ADC

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dc.contributor.authorSeo, Min-Jaeko
dc.contributor.authorKim, Ye Damko
dc.contributor.authorChung, Jae-Hyunko
dc.contributor.authorRyu, Seung-Takko
dc.date.accessioned2019-11-22T02:20:15Z-
dc.date.available2019-11-22T02:20:15Z-
dc.date.created2019-11-22-
dc.date.created2019-11-22-
dc.date.created2019-11-22-
dc.date.created2019-11-22-
dc.date.issued2019-06-11-
dc.identifier.citation39th Symposium on VLSI Technology / 33rd Symposium on VLSI Circuits, pp.C72 - C73-
dc.identifier.urihttp://hdl.handle.net/10203/268521-
dc.description.abstractThis work proposes a dual-residue pipelined-SAR ADC, that generates two residue signals from a single amplifier, which eliminates the need for gain-matching calibration. A capacitive interpolating SAR conversion technique is also proposed for the second stage for power efficiency. A prototype ADC fabricated in a 40nm CMOS occupies an active area of 0.026 mm(2) and achieves an SNDR of 62.1 dB at Nyquist and 67.1 dB SFDR under a 0.9 V supply.-
dc.languageEnglish-
dc.publisherIEEE-
dc.titleA 40nm CMOS 12b 200MS/s Single-amplifier Dual-residue Pipelined-SAR ADC-
dc.typeConference-
dc.identifier.wosid000531736500024-
dc.identifier.scopusid2-s2.0-85073914809-
dc.type.rimsCONF-
dc.citation.beginningpageC72-
dc.citation.endingpageC73-
dc.citation.publicationname39th Symposium on VLSI Technology / 33rd Symposium on VLSI Circuits-
dc.identifier.conferencecountryJA-
dc.identifier.conferencelocationRihga Royal Hotel Kyoto-
dc.identifier.doi10.23919/VLSIC.2019.8778005-
dc.contributor.localauthorRyu, Seung-Tak-
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EE-Conference Papers(학술회의논문)
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