A 28GHz 20.3%-Transmitter-Efficiency 1.5 degrees-Phase-Error Beamforming Front-End IC with Embedded Switches and Dual-Vector Variable-Gain Phase Shifters

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dc.contributor.authorPark, Jinseokko
dc.contributor.authorLee, Seungchanko
dc.contributor.authorLee, Donghoko
dc.contributor.authorHong, Songcheolko
dc.date.accessioned2019-11-21T06:20:17Z-
dc.date.available2019-11-21T06:20:17Z-
dc.date.created2019-11-21-
dc.date.created2019-11-21-
dc.date.issued2019-02-18-
dc.identifier.citation2019 IEEE International Solid-State Circuits Conference, ISSCC 2019, pp.176 - 178-
dc.identifier.issn0193-6530-
dc.identifier.urihttp://hdl.handle.net/10203/268506-
dc.description.abstractMillimeter-wave beamforming front-end ICs have been studied intensively as the service of 5G wireless communication is scheduled to begin in the near future [1-4]. The ICs include circuit elements such as PAs, LNAs, phase shifters, variable gain blocks, and switches to support antenna arrays for RF/hybrid beamforming. Due to the large number of antennas required for beamforming, the beamforming IC should include as many circuit elements as possible in a chip. The IC also needs high phase- and gain-control resolutions not only for controlling the beams precisely but also for error corrections and calibrations [1]. However, higher-bit controls of the phase and gain as well as high transmitting power increase the chip size in conventional structures, posing a trade-off between them. The front-end IC structure proposed here increases both transmitting power and gain/phase resolutions without increasing either the chip size or the power consumption.-
dc.languageEnglish-
dc.publisherInstitute of Electrical and Electronics Engineers Inc.-
dc.titleA 28GHz 20.3%-Transmitter-Efficiency 1.5 degrees-Phase-Error Beamforming Front-End IC with Embedded Switches and Dual-Vector Variable-Gain Phase Shifters-
dc.typeConference-
dc.identifier.wosid000463153600056-
dc.identifier.scopusid2-s2.0-85063458022-
dc.type.rimsCONF-
dc.citation.beginningpage176-
dc.citation.endingpage178-
dc.citation.publicationname2019 IEEE International Solid-State Circuits Conference, ISSCC 2019-
dc.identifier.conferencecountryUS-
dc.identifier.conferencelocationSan Francisco, CA-
dc.identifier.doi10.1109/ISSCC.2019.8662512-
dc.contributor.localauthorHong, Songcheol-
dc.contributor.nonIdAuthorLee, Dongho-
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