Fabrication of 50 nm trigate silicon on insulator metal-oxide-silicon field-effect transistor without source/drain activation annealing

Abstract

This paper presents the electrical characteristics of trigate silicon-on-insulator (SOI) n-type metal-oxide-silicon field-effect transistor (n-MOSFET) devices with a gate length of 50 nm, a channel width of 100 nm, and a channel thickness of 30 nm. The source and drain of these trigate SOI n-MOSFETs were formed by ion-shower doping at 250°C. In particular, activation annealing after ion-shower doping was excluded in order to improve the lateral steepness of the source/drain junction. Without any additional thermal processes, a low sheet resistance (Rs) of 1.2 kΩ/□ was obtained by ion-shower doping, and trigate MOSFETs showed satisfactory electrical characteristics. Since the short-channel effect was suppressed and the ratio of maximum drain current to minimum drain current (I max/Imin) as ∼105, it is thought that the ion-shower doping process is effective for fabricating short-channel trigate SOI MOSFET devices.