DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Seong Kwang | ko |
dc.contributor.author | Geum, Dae-Myeong | ko |
dc.contributor.author | Lim, Hyeong-Rak | ko |
dc.contributor.author | Kim, Hansung | ko |
dc.contributor.author | Han, Jae-Hoon | ko |
dc.contributor.author | Hwang, Do Kyung | ko |
dc.contributor.author | Song, Jin Dong | ko |
dc.contributor.author | Kim, Hyung-jun | ko |
dc.contributor.author | Kim, Sanghyeon | ko |
dc.date.accessioned | 2019-11-01T01:20:21Z | - |
dc.date.available | 2019-11-01T01:20:21Z | - |
dc.date.created | 2019-10-31 | - |
dc.date.issued | 2019-09 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.115, no.14 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/268115 | - |
dc.description.abstract | In this work, we fabricated n-In0.53Ga0.47As metal-oxide-semiconductor capacitors (MOSCAPs) with a metal-oxide-semiconductor (MOS) interface of Y2O3/In0.53Ga0.47As. We investigated interfacial properties of the gate stack through the H-2 ambient annealing process in MOSCAPs. We obtained an extremely low interface trap density of D-it = 1.8 x 10(11) cm(-2) eV(-1). We compared the H-2 annealing effect in different gate electrode materials of Ni and Pt. We determined that the Pt electrode was effective in maximizing the impact of H-2 annealing. Also, we fabricated In0.53Ga0.47As-on-insulator MOS field-effect-transistors using an optimized annealing process, which showed more stable electrical characteristics than devices through the N-2 ambient annealing process. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Improved characteristics of MOS interface between In0.53Ga0.47As and insulator by H-2 annealing with Pt gate electrode | - |
dc.type | Article | - |
dc.identifier.wosid | 000489308600029 | - |
dc.identifier.scopusid | 2-s2.0-85072941154 | - |
dc.type.rims | ART | - |
dc.citation.volume | 115 | - |
dc.citation.issue | 14 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.5111377 | - |
dc.contributor.localauthor | Kim, Sanghyeon | - |
dc.contributor.nonIdAuthor | Geum, Dae-Myeong | - |
dc.contributor.nonIdAuthor | Lim, Hyeong-Rak | - |
dc.contributor.nonIdAuthor | Kim, Hansung | - |
dc.contributor.nonIdAuthor | Han, Jae-Hoon | - |
dc.contributor.nonIdAuthor | Hwang, Do Kyung | - |
dc.contributor.nonIdAuthor | Song, Jin Dong | - |
dc.contributor.nonIdAuthor | Kim, Hyung-jun | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | IMPACT | - |
dc.subject.keywordPlus | OXIDATION | - |
dc.subject.keywordPlus | MECHANISM | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | MOSFETS | - |
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