DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Hojin | ko |
dc.contributor.author | Jang, Yuseong | ko |
dc.contributor.author | Nam, Sung-Wook | ko |
dc.contributor.author | Jung, Chanwon | ko |
dc.contributor.author | Choi, Pyuck-Pa | ko |
dc.contributor.author | Gwak, Jihye | ko |
dc.contributor.author | Yun, Jae Ho | ko |
dc.contributor.author | Kim, Kihwan | ko |
dc.contributor.author | Shin, Byungha | ko |
dc.date.accessioned | 2019-10-22T09:20:26Z | - |
dc.date.available | 2019-10-22T09:20:26Z | - |
dc.date.created | 2019-10-22 | - |
dc.date.created | 2019-10-22 | - |
dc.date.issued | 2019-10 | - |
dc.identifier.citation | ACS APPLIED MATERIALS & INTERFACES, v.11, no.39, pp.35653 - 35660 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | http://hdl.handle.net/10203/268036 | - |
dc.description.abstract | Heavy-alkali post-deposition treatments (PDTs) utilizing Cs or Rb has become an indispensable step in producing high-performance Cu(In,Ga)Se-2 (CIGS) solar cells. However, full understanding of the mechanism behind the improvements of device performance by heavy-alkali treatments, particularly in terms of potential modification of defect characteristics, has not been reached yet. Here, we present an extensive study on the effects of CsF-PDT on material properties of CIGS absorbers and the performance of the final solar devices. Incorporation of an optimized concentration of Cs into CIGS resulted in a significant improvement of the device efficiency from 15.9 to 18.4% mainly due to an increase in the open-circuit voltage by 50 mV. Strong segregation of Cs at the front and rear interfaces as well as along grain boundaries of CIGS was observed via high-resolution chemical analysis such as atomic probe tomography. The study of defect chemistry using photoluminescence and capacitance-based measurements revealed that both deep-level donor-like defects such as V-Se and In-Cu and deep-level acceptor-like defects such as V-In or Cu-In are passivated by CsF-PDT, which contribute to an increased hole concentration. Additionally, it was found that CsF-PDT induces a slight change in the energetics of V-Cu, the most dominant point defect that is responsible for the p-type conductivity of CIGS. | - |
dc.language | English | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Passivation of Deep-Level Defects by Cesium Fluoride Post-Deposition Treatment for Improved Device Performance of Cu(In,Ga)Se-2 Solar Cells | - |
dc.type | Article | - |
dc.identifier.wosid | 000489001900015 | - |
dc.identifier.scopusid | 2-s2.0-85072848748 | - |
dc.type.rims | ART | - |
dc.citation.volume | 11 | - |
dc.citation.issue | 39 | - |
dc.citation.beginningpage | 35653 | - |
dc.citation.endingpage | 35660 | - |
dc.citation.publicationname | ACS APPLIED MATERIALS & INTERFACES | - |
dc.identifier.doi | 10.1021/acsami.9b08316 | - |
dc.contributor.localauthor | Choi, Pyuck-Pa | - |
dc.contributor.localauthor | Shin, Byungha | - |
dc.contributor.nonIdAuthor | Lee, Hojin | - |
dc.contributor.nonIdAuthor | Jang, Yuseong | - |
dc.contributor.nonIdAuthor | Nam, Sung-Wook | - |
dc.contributor.nonIdAuthor | Gwak, Jihye | - |
dc.contributor.nonIdAuthor | Yun, Jae Ho | - |
dc.contributor.nonIdAuthor | Kim, Kihwan | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Cu(In,Ga)Se-2 solar cells | - |
dc.subject.keywordAuthor | inorganic thin-film material | - |
dc.subject.keywordAuthor | post-deposition treatment | - |
dc.subject.keywordAuthor | heavy-alkali incorporation | - |
dc.subject.keywordAuthor | defect passivation | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | ATOM-PROBE | - |
dc.subject.keywordPlus | POLYCRYSTALLINE CU(IN,GA)SE-2 | - |
dc.subject.keywordPlus | GRAIN-BOUNDARIES | - |
dc.subject.keywordPlus | EFFICIENCY | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | SODIUM | - |
dc.subject.keywordPlus | DISTRIBUTIONS | - |
dc.subject.keywordPlus | CUINSE2 | - |
dc.subject.keywordPlus | IMPACT | - |
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