TMDC based charge trap memory with high-k polymer dielectric for soft electronics

Abstract

As increasing the need for storing and processing mass data with the advent of Internet of Things (IoT), the interest about memory devices is also increasing. Especially, studies about flexible and wearable memory device have been actively done for next-generation memory device. Until now, the studies of conventional flexible memory were focused on organic channel based memory device. In addition to inherent flexibility of organic material, the device can be produced at low temperature in large quantities. However, the organic based memory shows low device performance and cannot be integrated for high density. Also, it is impossible to use conventional photolithography process. Therefore in this research, we fabricated memory device using two-dimensional (2D) material like molybdenum disulfide ($MoS_2$) because of its remarkable electrical and mechanical characteristics by its atomic thickness and analyzed the characteristics of fabricated memory device. Especially unlike conventional two-dimensional based memory devices using metal-oxide based dielectric, we fabricated high performance memory device at low operation power using ultrathin high-k polymer dielectric called pC1D1. In addition, using the advantages of large-area growth of 2D material by chemical vapor deposition (CVD) process, we fabricated large-area memory array and analyzed its characteristics. Although large-area memory array showed not good performance, we left the possibility to improve the performance and realize large-area flexible memory array by deep research. We hope this research to help the development of further wearable and flexible memory device.