DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | Kim, Sang Ouk | - |
dc.contributor.advisor | 김상욱 | - |
dc.contributor.author | Jung, Dong Hun | - |
dc.date.accessioned | 2019-09-03T02:45:10Z | - |
dc.date.available | 2019-09-03T02:45:10Z | - |
dc.date.issued | 2019 | - |
dc.identifier.uri | http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=843328&flag=dissertation | en_US |
dc.identifier.uri | http://hdl.handle.net/10203/266426 | - |
dc.description | 학위논문(석사) - 한국과학기술원 : 신소재공학과, 2019.2,[ⅳ, 36 p. :] | - |
dc.description.abstract | Organic-inorganic hybrid perovskite (PVSK) has received huge attentions as a promising materials for next generation light emitting diodes (LEDs) because of its high color purity, low cost and many other advantages in spite of low device efficiency. To enhance the perovskite LED efficiency, the morphology of PVSK film such as grain size and surface roughness is carefully controlled due to its intrinsic properties (long diffusion length and small binding energy of excitons). However, the current method to control the morphology (A-NCP) to solve it has some limitations in reducing grain size further and surface roughness. So, other solution for efficient and convenient control was required. Here, we introduced flash light annealing (FLA) inducing ultrafast melting and recrystallization of PVSK film in microsecond scale that can easily control the morphology of film. The grain size and film roughness were clearly reduced by simple modifying of flash light intensity compared with TA treatment. The trap density reduction due to densification of film after optimized FLA was also investigated by PL analysis and photothermal degradation mechanism was suggested by XPS data. Finally, we fabricated FLA perovskite LED and 2.5 times higher current efficiency (1.05 cd/A) than TA treated device was observed at the optimized condition showing smallest average grain size (~ 38 nm) without any degradation. | - |
dc.language | eng | - |
dc.publisher | 한국과학기술원 | - |
dc.subject | Perovskite▼aflash light annealing▼arecrystallization▼agrain size▼alight-emitting diodes | - |
dc.subject | 페로브스카이트▼a플래쉬 라이트 어닐링▼a재결정▼a결정립 크기▼a발광 소자 | - |
dc.title | Flash light induced recrystallization of perovskite for high efficiency light-emitting diodes | - |
dc.title.alternative | 플래쉬 라이트를 활용한 페로브스카이트 재결정 유도 및 발광 소자 효율 향상 | - |
dc.type | Thesis(Master) | - |
dc.identifier.CNRN | 325007 | - |
dc.description.department | 한국과학기술원 :신소재공학과, | - |
dc.contributor.alternativeauthor | 정동훈 | - |
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