Enhanced light emission from a strained germanium micro-bridge structures in telecommunication wavelength = 게르마늄 브릿지구조를 통한 스트레인 변화와 통신파장에서의 발광 향상에 관한 연구

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Si photonics based opctical interconnection are actively researched by many groups due to a possibility of great enhancement of chip-to-chip data transmission. Especially, germanium (Ge) which can be easily grown on a Si substrate is a good candidate for on-chip optical source materials because the indirect bandgap of germanium can be converted into bandgap directly by controlling the strain. In this paper, we designed and fabricated micro-bridge which control local strain for enhancing the light emission efficiency. The strain of micro-bridge was measured from the Raman spectroscopy. Also, we confirmed that the strain change in the micro-bridge followed the strain change obtained from numerical calculations well. We also analyzed the luminescence properties of Ge based micro-bridge by using photoluminescence measurement. The emission wavelength was changed depending on the strain, and the emission intensity was also increased with the increase of strain in the bridge.Our study is expected to be a milestone of Ge based optical sources fabrication.
Advisors
Cho, Yong Hoonresearcher조용훈researcher
Description
한국과학기술원 :물리학과,
Publisher
한국과학기술원
Issue Date
2018
Identifier
325007
Language
eng
Description

학위논문(석사) - 한국과학기술원 : 물리학과, 2018.2,[iv, 37 p. :]

Keywords

germanium▼asilicon▼alight source▼aphotonics▼astrain▼aemission efficiency; 게르마늄▼a실리콘▼a광원▼a포토닉스▼a스트레인▼a발광 효율

URI
http://hdl.handle.net/10203/266100
Link
http://library.kaist.ac.kr/search/detail/view.do?bibCtrlNo=733794&flag=dissertation
Appears in Collection
PH-Theses_Master(석사논문)
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